| Literature DB >> 18715073 |
Shunsuke Furuse1, Kiichirou Koyasu, Junko Atobe, Atsushi Nakajima.
Abstract
Silicon (Si), germanium (Ge), tin (Sn), and lead (Pb) clusters mixed with a group-4 transition metal atom [M = titanium (Ti), zirconium (Zr), and hafnium (Hf)] were generated by a dual-laser vaporization method, and their properties were analyzed by means of time-of-flight mass spectroscopy and anion photoelectron spectroscopy together with theoretical calculations. In the mass spectra, mixed neutral clusters of MSi(16), MGe(16), and MSn(16) were produced specifically, but the yield of MPb(16) was low. The anion photoelectron spectra revealed that MSi(16), MGe(16), and MSn(16) neutrals have large highest occupied molecular orbital-lowest unoccupied molecular orbital gaps of 1.5-1.9 eV compared to those of MPb(16) (0.8-0.9 eV), implying that MSi(16), MGe(16), and MSn(16) are evidently electronically stable clusters. Cage aromaticity appears to be an important determinant of the electronic stability of these clusters: Calculations of nucleus-independent chemical shifts (NICSs) show that Si(16)(4-), Ge(16)(4-), and Sn(16)(4-) have aromatic characters with negative NICS values, while Pb(16)(4-) has an antiaromatic character with a positive NICS value.Entities:
Year: 2008 PMID: 18715073 DOI: 10.1063/1.2966005
Source DB: PubMed Journal: J Chem Phys ISSN: 0021-9606 Impact factor: 3.488