| Literature DB >> 18615769 |
Alfred J Baca1, Jong-Hyun Ahn, Yugang Sun, Matthew A Meitl, Etienne Menard, Hoon-Sik Kim, Won Mook Choi, Dae-Hyeong Kim, Young Huang, John A Rogers.
Abstract
This article reviews the properties, fabrication and assembly of inorganic semiconductor materials that can be used as active building blocks to form high-performance transistors and circuits for flexible and bendable large-area electronics. Obtaining high performance on low temperature polymeric substrates represents a technical challenge for macroelectronics. Therefore, the fabrication of high quality inorganic materials in the form of wires, ribbons, membranes, sheets, and bars formed by bottom-up and top-down approaches, and the assembly strategies used to deposit these thin films onto plastic substrates will be emphasized. Substantial progress has been made in creating inorganic semiconducting materials that are stretchable and bendable, and the description of the mechanics of these form factors will be presented, including circuits in three-dimensional layouts. Finally, future directions and promising areas of research will be described.Year: 2008 PMID: 18615769 DOI: 10.1002/anie.200703238
Source DB: PubMed Journal: Angew Chem Int Ed Engl ISSN: 1433-7851 Impact factor: 15.336