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Literature DB >> 18576282

High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy.

Philippe Caroff¹, Jakob B Wagner, Kimberly A Dick, Henrik A Nilsson, Mattias Jeppsson, Knut Deppert, Lars Samuelson, L Reine Wallenberg, Lars-Erik Wernersson.

Abstract

Entities: Chemical

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Year: 2008 PMID： 18576282 DOI： 10.1002/smll.200700892

Source DB: PubMed Journal: Small ISSN： 1613-6810 Impact factor: 13.281

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11 in total

1. Controlled polytypic and twin-plane superlattices in iii-v nanowires.

Authors: P Caroff; K A Dick; J Johansson; M E Messing; K Deppert; L Samuelson
Journal: Nat Nanotechnol Date: 2008-11-30 Impact factor: 39.213

2. Growth mechanism of self-catalyzed group III-V nanowires.

Authors: Bernhard Mandl; Julian Stangl; Emelie Hilner; Alexei A Zakharov; Karla Hillerich; Anil W Dey; Lars Samuelson; Günther Bauer; Knut Deppert; Anders Mikkelsen
Journal: Nano Lett Date: 2010-11-10 Impact factor: 11.189

3. InAs-mediated growth of vertical InSb nanowires on Si substrates.

Authors: Tianfeng Li; Lizhen Gao; Wen Lei; Lijun Guo; Huayong Pan; Tao Yang; Yonghai Chen; Zhanguo Wang
Journal: Nanoscale Res Lett Date: 2013-07-24 Impact factor: 4.703

4. Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device.

Authors: M T Deng; C L Yu; G Y Huang; M Larsson; P Caroff; H Q Xu
Journal: Sci Rep Date: 2014-12-01 Impact factor: 4.379

5. Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions.

Authors: S Li; N Kang; D X Fan; L B Wang; Y Q Huang; P Caroff; H Q Xu
Journal: Sci Rep Date: 2016-04-22 Impact factor: 4.379

6. Synthesis of Amorphous InSb Nanowires and a Study of the Effects of Laser Radiation and Thermal Annealing on Nanowire Crystallinity.

Authors: Zaina Algarni; Abhay Singh; Usha Philipose
Journal: Nanomaterials (Basel) Date: 2018-08-09 Impact factor: 5.076

High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy.

1. Controlled polytypic and twin-plane superlattices in iii-v nanowires.

2. Growth mechanism of self-catalyzed group III-V nanowires.

3. InAs-mediated growth of vertical InSb nanowires on Si substrates.

4. Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device.

5. Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions.

6. Synthesis of Amorphous InSb Nanowires and a Study of the Effects of Laser Radiation and Thermal Annealing on Nanowire Crystallinity.

7. High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire.

8. Gold-free ternary III-V antimonide nanowire arrays on silicon: twin-free down to the first bilayer.

Review 9. Indium Antimonide Nanowires: Synthesis and Properties.

10. Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process.