Literature DB >> 18575568

SHG in doped GaSe:In crystals.

Zhi-Shu Feng1, Zhi-Hui Kang, Feng-Guang Wu, Jin-Yue Gao, Yun Jiang, Hong-Zhi Zhang, Yury M Andreev, Grigory V Lanskii, Viktor V Atuchin, Tatyana A Gavrilova.   

Abstract

Optical transmission range and phase matching (PM) conditions for second harmonic generation (SHG) of Er3+:YSGG and CO2 laser in indium doped GaSe:In(0.1, 1.23, 2.32 mass%) are studied in comparison with these in pure and sulfur doped GaSe:S(0.09, 0.5, 2.2, 3 mass%) crystals. No changes in transparency curve are found in GaSe crystals up to 2.32 mass% indium content, but as small change as 0.18 degrees in PM angle for 2.79 microm Er3+:YSGG laser SHG and approximately 0.06 degrees for 9.58 microm CO2 laser emission line SHG are detected. PM properties of the crystals are evaluated as a function of temperature over the range from -165 to 230 degrees C. The value of dtheta/dT, the change in PM angle with variation of temperature, is found to be very small for GaSe:In crystals. While for SHG of Er3+:YSGG laser, dtheta/dT =22"/1 degrees C only, it is as small as -4.9"/1 degrees C for that of CO2 laser radiation. Linear variation of PM angle with temperature increasing is an indicator of absence of crystals structure transformation within temperature range from -165 to 230 degrees C. Thus, application of GaSe:In solid solutions in high average power nonlinear optical systems seems to be prospective.

Entities:  

Mesh:

Substances:

Year:  2008        PMID: 18575568     DOI: 10.1364/oe.16.009978

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  3 in total

1.  Investigation of second- and third-harmonic generation in few-layer gallium selenide by multiphoton microscopy.

Authors:  Lasse Karvonen; Antti Säynätjoki; Soroush Mehravar; Raul D Rodriguez; Susanne Hartmann; Dietrich R T Zahn; Seppo Honkanen; Robert A Norwood; N Peyghambarian; Khanh Kieu; Harri Lipsanen; Juha Riikonen
Journal:  Sci Rep       Date:  2015-05-19       Impact factor: 4.379

2.  High-Quality GaSe Single Crystal Grown by the Bridgman Method.

Authors:  Tao Wang; Jie Li; Qinghua Zhao; Ziang Yin; Yinghan Zhang; Bingqi Chen; Yong Xie; Wanqi Jie
Journal:  Materials (Basel)       Date:  2018-01-24       Impact factor: 3.623

3.  Growth and anisotropy of transport properties of CuGaSe 2 single crystals.

Authors:  M Mobarak; M Ashari; M M Nassary; S G Fatma
Journal:  Heliyon       Date:  2018-11-21
  3 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.