Literature DB >> 18575563

High speed hybrid silicon evanescent electroabsorption modulator.

Ying-Hao Kuo1, Hui-Wen Chen, John E Bowers.   

Abstract

A new way to make high speed modulators using Si waveguides is demonstrated. The hybrid silicon evanescent electroabsorption modulator with offset AlGaInAs quantum wells has an extinction ratio over 10 dB and modulation bandwidth of 10 GHz. The modulator has a clean open eye at 10 Gb/s with sub-volt drive.

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Year:  2008        PMID： 18575563     DOI： 10.1364/oe.16.009936

Source DB:  PubMed          Journal:  Opt Express        ISSN： 1094-4087            Impact factor:   3.894


  2 in total

1.  Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects.

Authors:  Gyungock Kim; Hyundai Park; Jiho Joo; Ki-Seok Jang; Myung-Joon Kwack; Sanghoon Kim; In Gyoo Kim; Jin Hyuk Oh; Sun Ae Kim; Jaegyu Park; Sanggi Kim
Journal:  Sci Rep       Date:  2015-06-10       Impact factor: 4.379

Review 2.  Recent progress in GeSi electro-absorption modulators.

Authors:  Papichaya Chaisakul; Delphine Marris-Morini; Mohamed-Said Rouifed; Jacopo Frigerio; Daniel Chrastina; Jean-René Coudevylle; Xavier Le Roux; Samson Edmond; Giovanni Isella; Laurent Vivien
Journal:  Sci Technol Adv Mater       Date:  2013-12-03       Impact factor: 8.090
  2 in total

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