| Literature DB >> 18575500 |
Y Kang1, M Zadka, S Litski, G Sarid, M Morse, M J Paniccia, Y-H Kuo, J Bowers, A Beling, H D Liu, D C McIntosh, J Campbell, A Pauchard.
Abstract
We designed and fabricated Ge/Si avalanche photodiodes grown on silicon substrates. The mesa-type photodiodes exhibit a responsivity at 1310 nm of 0.54 A/W, a breakdown voltage thermal coefficient of 0.05%/ degrees C, a 3 dB-bandwidth of 10 GHz. The gain-bandwidth product was measured as 153 GHz. The effective k value extracted from the excess noise factor was 0.1.Entities:
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Year: 2008 PMID： 18575500 DOI： 10.1364/oe.16.009365
Source DB: PubMed Journal: Opt Express ISSN： 1094-4087 Impact factor: 3.894