Literature DB >> 18547052

Trifluoromethyltriphenodioxazine: air-stable and high-performance n-type semiconductor.

Chong-an Di1, Jing Li, Gui Yu, Yi Xiao, Yunlong Guo, Yunqi Liu, Xuhong Qian, Daoben Zhu.   

Abstract

Two trifluoromethyltriphenodioxazines were efficiently synthesized as active materials for n-type organic field-effect transistors, and their optical and electrochemical properties were characterized. Air-stable and high-performance thin film transistors based on the two compounds were fabricated.

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Year:  2008        PMID: 18547052     DOI: 10.1021/ol8008667

Source DB:  PubMed          Journal:  Org Lett        ISSN: 1523-7052            Impact factor:   6.005


  1 in total

1.  On-surface chemistry using local high electric fields.

Authors:  Thomas Leoni; Tony Lelaidier; Anthony Thomas; Alain Ranguis; Olivier Siri; Claudio Attaccalite; Conrad Becker
Journal:  Nanoscale Adv       Date:  2021-08-07
  1 in total

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