Literature DB >> 18545346

Low loss (approximately 6.45dB/cm) sub-micron polycrystalline silicon waveguide integrated with efficient SiON waveguide coupler.

Q Fang1, J F Song, S H Tao, M B Yu, G Q Lo, D L Kwong.   

Abstract

In this communication, the sub-micron size polycrystalline silicon (poly- Si) single mode waveguides are fabricated and integrated with SiON waveguide coupler by deep UV lithography. The propagation loss of poly-Si waveguide and coupling loss with optical flat polarization-maintaining fiber (PMF) are measured. For whole C-band (i.e., lambda approximately 1520-1565nm), the propagation loss of TE mode is measured to approximately 6.45+/-0.3dB/cm. The coupling loss with optical flat PMF is approximately 3.4dB/facet for TE mode. To the best of our knowledge, the propagation loss is among the best reported results. This communication discusses the factors reducing the propagation loss, especially the effect of the refractive index contrast. Compared to the SiO(2) cladding, poly-Si waveguide with SiON cladding exhibits lower propagation loss.

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Year:  2008        PMID: 18545346     DOI: 10.1364/oe.16.006425

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  1 in total

1.  Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions.

Authors:  Mariano Gioffré; Giuseppe Coppola; Mario Iodice; Maurizio Casalino
Journal:  Sensors (Basel)       Date:  2018-11-03       Impact factor: 3.576

  1 in total

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