Literature DB >> 18535990

Interface and wetting layer effect on the catalyst-free nucleation and growth of GaN nanowires.

Toma Stoica1, Eli Sutter, Ralph J Meijers, Ratan K Debnath, Raffaella Calarco, Hans Lüth, Detlev Grützmacher.   

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Year:  2008        PMID： 18535990     DOI： 10.1002/smll.200700936

Source DB:  PubMed          Journal:  Small        ISSN： 1613-6810            Impact factor:   13.281


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  9 in total

1.  Probing Nucleation Mechanism of Self-Catalyzed InN Nanostructures.

Authors:  Guowei Xu; Zhuangzhi Li; Javier Baca; Judy Wu
Journal:  Nanoscale Res Lett       Date:  2009-09-16       Impact factor: 4.703

2.  Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy.

Authors:  Yongjin Wang; Fangren Hu; Kazuhiro Hane
Journal:  Nanoscale Res Lett       Date:  2011-02-04       Impact factor: 4.703

3.  MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation.

Authors:  Yanxiong E; Zhibiao Hao; Jiadong Yu; Chao Wu; Runze Liu; Lai Wang; Bing Xiong; Jian Wang; Yanjun Han; Changzheng Sun; Yi Luo
Journal:  Nanoscale Res Lett       Date:  2015-10-05       Impact factor: 4.703

4.  Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy.

Authors:  Alexey D Bolshakov; Alexey M Mozharov; Georgiy A Sapunov; Igor V Shtrom; Nickolay V Sibirev; Vladimir V Fedorov; Evgeniy V Ubyivovk; Maria Tchernycheva; George E Cirlin; Ivan S Mukhin
Journal:  Beilstein J Nanotechnol       Date:  2018-01-15       Impact factor: 3.649

5.  III-nitride core-shell nanorod array on quartz substrates.

Authors:  Si-Young Bae; Jung-Wook Min; Hyeong-Yong Hwang; Kaddour Lekhal; Ho-Jun Lee; Young-Dahl Jho; Dong-Seon Lee; Yong-Tak Lee; Nobuyuki Ikarashi; Yoshio Honda; Hiroshi Amano
Journal:  Sci Rep       Date:  2017-03-27       Impact factor: 4.379

Review 6.  Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring.

Authors:  Tuan-Anh Pham; Afzaal Qamar; Toan Dinh; Mostafa Kamal Masud; Mina Rais-Zadeh; Debbie G Senesky; Yusuke Yamauchi; Nam-Trung Nguyen; Hoang-Phuong Phan
Journal:  Adv Sci (Weinh)       Date:  2020-09-24       Impact factor: 16.806

7.  Vertically aligned InGaN nanowires with engineered axial In composition for highly efficient visible light emission.

Authors:  Mohamed Ebaid; Jin-Ho Kang; Yang-Seok Yoo; Seung-Hyuk Lim; Yong-Hoon Cho; Sang-Wan Ryu
Journal:  Sci Rep       Date:  2015-11-20       Impact factor: 4.379

8.  Selective-area growth of single-crystal wurtzite GaN nanorods on SiOx/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing.

Authors:  Elena Alexandra Serban; Justinas Palisaitis; Chia-Cheng Yeh; Hsu-Cheng Hsu; Yu-Lin Tsai; Hao-Chung Kuo; Muhammad Junaid; Lars Hultman; Per Ola Åke Persson; Jens Birch; Ching-Lien Hsiao
Journal:  Sci Rep       Date:  2017-10-05       Impact factor: 4.379

9.  Effects of N₂ Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy.

Authors:  Muhammad Junaid; Ching-Lien Hsiao; Yen-Ting Chen; Jun Lu; Justinas Palisaitis; Per Ola Åke Persson; Lars Hultman; Jens Birch
Journal:  Nanomaterials (Basel)       Date:  2018-04-07       Impact factor: 5.076
  9 in total

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