Literature DB >> 18518318

Origin of anomalous electronic structures of epitaxial graphene on silicon carbide.

Seungchul Kim1, Jisoon Ihm, Hyoung Joon Choi, Young-Woo Son.   

Abstract

On the basis of first-principles calculations, we report that a novel interfacial atomic structure occurs between graphene and the surface of silicon carbide, destroying the Dirac point of graphene and opening a substantial energy gap there. In the calculated atomic structures, a quasiperiodic 6x6 domain pattern emerges out of a larger commensurate 6 sqrt [3] x 6 sqrt [3]R30 degrees periodic interfacial reconstruction, resolving a long standing experimental controversy on the periodicity of the interfacial superstructures. Our theoretical energy spectrum shows a gap and midgap states at the Dirac point of graphene, which are in excellent agreement with the recently observed anomalous angle-resolved photoemission spectra. Beyond solving unexplained issues in epitaxial graphene, our atomistic study may provide a way to engineer the energy gaps of graphene on substrates.

Entities:  

Year:  2008        PMID: 18518318     DOI: 10.1103/PhysRevLett.100.176802

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  15 in total

1.  Formation of unconventional standing waves at graphene edges by valley mixing and pseudospin rotation.

Authors:  Changwon Park; Heejun Yang; Andrew J Mayne; Gérald Dujardin; Sunae Seo; Young Kuk; Jisoon Ihm; Gunn Kim
Journal:  Proc Natl Acad Sci U S A       Date:  2011-11-02       Impact factor: 11.205

2.  Graphene transistors.

Authors:  Frank Schwierz
Journal:  Nat Nanotechnol       Date:  2010-05-30       Impact factor: 39.213

Review 3.  Carbon-Related Materials: Graphene and Carbon Nanotubes in Semiconductor Applications and Design.

Authors:  Mohammadreza Kolahdouz; Buqing Xu; Aryanaz Faghih Nasiri; Maryam Fathollahzadeh; Mahmoud Manian; Hossein Aghababa; Yuanyuan Wu; Henry H Radamson
Journal:  Micromachines (Basel)       Date:  2022-08-04       Impact factor: 3.523

4.  Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy.

Authors:  Heather M Hill; Albert F Rigosi; Sugata Chowdhury; Yanfei Yang; Nhan V Nguyen; Francesca Tavazza; Randolph E Elmquist; David B Newell; Angela R Hight Walker
Journal:  Phys Rev B       Date:  2017-11-28       Impact factor: 4.036

5.  Multiscale investigation of graphene layers on 6H-SiC(000-1).

Authors:  Antoine Tiberj; Jean-Roch Huntzinger; Jean Camassel; Fanny Hiebel; Ather Mahmood; Pierre Mallet; Cecile Naud; Jean-Yves Veuillen
Journal:  Nanoscale Res Lett       Date:  2011-02-24       Impact factor: 4.703

6.  Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature.

Authors:  Mykola Telychko; Jan Berger; Zsolt Majzik; Pavel Jelínek; Martin Švec
Journal:  Beilstein J Nanotechnol       Date:  2015-04-07       Impact factor: 3.649

7.  Microscopically-tuned band structure of epitaxial graphene through interface and stacking variations using Si substrate microfabrication.

Authors:  Hirokazu Fukidome; Takayuki Ide; Yusuke Kawai; Toshihiro Shinohara; Naoka Nagamura; Koji Horiba; Masato Kotsugi; Takuo Ohkochi; Toyohiko Kinoshita; Hiroshi Kumighashira; Masaharu Oshima; Maki Suemitsu
Journal:  Sci Rep       Date:  2014-06-06       Impact factor: 4.379

8.  Determining chemically and spatially resolved atomic profile of low contrast interface structure with high resolution.

Authors:  Maheswar Nayak; P C Pradhan; G S Lodha
Journal:  Sci Rep       Date:  2015-03-02       Impact factor: 4.379

9.  Direct transformation of amorphous silicon carbide into graphene under low temperature and ambient pressure.

Authors:  Tao Peng; Haifeng Lv; Daping He; Mu Pan; Shichun Mu
Journal:  Sci Rep       Date:  2013-01-28       Impact factor: 4.379

10.  Graphene from amorphous titanium carbide by chlorination under 200 °C and atmospheric pressures.

Authors:  Tao Peng; Zongkui Kou; Hui Wu; Shichun Mu
Journal:  Sci Rep       Date:  2014-06-30       Impact factor: 4.379

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