Disorder scattering in magnetic tunnel junctions: theory of nonequilibrium vertex correction.

We report a first principles formalism and its numerical implementation for treating quantum transport properties of nanoelectronic devices with atomistic disorder. We develop a nonequilibrium vertex correction (NVC) theory to handle the configurational average of random disorder at the density matrix level so that disorder effects to nonlinear and nonequilibrium quantum transport can be calculated from atomic first principles in a self-consistent and efficient manner. We implement the NVC into a Keldysh nonequilibrium Green's function (NEGF) -based density functional theory (DFT) and apply the NEGF-DFT-NVC formalism to Fe/vacuum/Fe magnetic tunnel junctions with interface roughness disorder. Our results show that disorder has dramatic effects on the nonlinear spin injection and tunnel magnetoresistance ratio.