Literature DB >> 18518135

Proposal for a new class of materials: spin gapless semiconductors.

X L Wang1.   

Abstract

The concept of the spin gapless semiconductor in which both electron and hole can be fully spin polarized is proposed, and its possibility is presented on the basis of first-principles electronic structure calculations. Possible new physics and potential applications in spintronic devices based on the spin gapless semiconductors are discussed.

Year:  2008        PMID： 18518135     DOI： 10.1103/PhysRevLett.100.156404

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


  26 in total

1.  Spin filtering controller induced by phase transitions in fluorographane.

Authors:  Cuicui Sun; Yingjie Jiang; Yanmin Wang; Xiao-Cun Liu; Yanling Wu; Yongling Ding; Guiling Zhang
Journal:  RSC Adv       Date:  2021-11-04       Impact factor: 3.361

2.  Adsorbing the magnetic superhalogen MnCl3 to realize intriguing half-metallic and spin-gapless-semiconducting behavior in zigzag or armchair SiC nanoribbon.

Authors:  Hui Li; Guangtao Yu; Zengsong Zhang; Yanfeng Ma; Xuri Huang; Wei Chen
Journal:  RSC Adv       Date:  2018-04-11       Impact factor: 4.036

3.  Effect of swap disorder on the physical properties of the quaternary Heusler alloy PdMnTiAl: a first-principles study.

Authors:  Guanhua Qin; Wei Wu; Shunbo Hu; Yongxue Tao; Xiaoyan Yan; Chao Jing; Xi Li; Hui Gu; Shixun Cao; Wei Ren
Journal:  IUCrJ       Date:  2017-06-21       Impact factor: 4.769

4.  Rare earth-based quaternary Heusler compounds MCoVZ (M = Lu, Y; Z = Si, Ge) with tunable band characteristics for potential spintronic applications.

Authors:  Xiaotian Wang; Zhenxiang Cheng; Guodong Liu; Xuefang Dai; Rabah Khenata; Liying Wang; Abdelmadjid Bouhemadou
Journal:  IUCrJ       Date:  2017-10-06       Impact factor: 4.769

5.  Theoretical prediction of strain tuneable quaternary spintronic Heusler compounds.

Authors:  Jan-Willem G Bos
Journal:  IUCrJ       Date:  2017-10-27       Impact factor: 4.769

6.  Coexistence of valley polarization and Chern insulating states in MoS2 monolayers with n-p codoping.

Authors:  Xinyuan Wei; Jiayong Zhang; Bao Zhao; Zhongqin Yang
Journal:  Sci Rep       Date:  2020-06-17       Impact factor: 4.379

7.  First principles prediction of the magnetic properties of Fe-X₆ (X = S, C, N, O, F) doped monolayer MoS₂.

Authors:  Nan Feng; Wenbo Mi; Yingchun Cheng; Zaibing Guo; Udo Schwingenschlögl; Haili Bai
Journal:  Sci Rep       Date:  2014-02-05       Impact factor: 4.379

8.  A dye-sensitized visible light photocatalyst-Bi24O31Cl10.

Authors:  Liang Wang; Jun Shang; Weichang Hao; Shiqi Jiang; Shiheng Huang; Tianmin Wang; Ziqi Sun; Yi Du; Shixue Dou; Tengfeng Xie; Dejun Wang; Jiaou Wang
Journal:  Sci Rep       Date:  2014-12-09       Impact factor: 4.379

9.  Electronic structure and its external electric field modulation of PbPdO2 ultrathin slabs with (002) and (211) preferred orientations.

Authors:  Yanmin Yang; Kehua Zhong; Guigui Xu; Jian-Min Zhang; Zhigao Huang
Journal:  Sci Rep       Date:  2017-07-31       Impact factor: 4.379

10.  Nucleation and annihilation of skyrmions in Mn2CoAl observed through the topological Hall effect.

Authors:  B M Ludbrook; G Dubuis; A-H Puichaud; B J Ruck; S Granville
Journal:  Sci Rep       Date:  2017-10-19       Impact factor: 4.379
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