Literature DB >> 18451847

Electronics: the fourth element.

James M Tour, Tao He.   

Abstract

Year:  2008        PMID: 18451847     DOI: 10.1038/453042a

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


× No keyword cloud information.
  11 in total

1.  Stability of delayed memristive neural networks with time-varying impulses.

Authors:  Jiangtao Qi; Chuandong Li; Tingwen Huang
Journal:  Cogn Neurodyn       Date:  2014-03-27       Impact factor: 5.082

2.  Exponential synchronization of memristive Cohen-Grossberg neural networks with mixed delays.

Authors:  Xinsong Yang; Jinde Cao; Wenwu Yu
Journal:  Cogn Neurodyn       Date:  2014-01-04       Impact factor: 5.082

3.  Global [Formula: see text] stabilization of fractional-order memristive neural networks with time delays.

Authors:  Ling Liu; Ailong Wu; Xingguo Song
Journal:  Springerplus       Date:  2016-07-09

4.  Stability analysis of memristor-based fractional-order neural networks with different memductance functions.

Authors:  R Rakkiyappan; G Velmurugan; Jinde Cao
Journal:  Cogn Neurodyn       Date:  2014-10-09       Impact factor: 5.082

5.  The Missing Memristor has Not been Found.

Authors:  Sascha Vongehr; Xiangkang Meng
Journal:  Sci Rep       Date:  2015-06-25       Impact factor: 4.379

6.  Field-induced p-n transition in yttria-stabilized zirconia.

Authors:  Marc Jovaní; Héctor Beltrán-Mir; Eloísa Cordoncillo; Anthony R West
Journal:  Sci Rep       Date:  2019-12-06       Impact factor: 4.379

7.  Electromagnetic Interference Effects of Continuous Waves on Memristors: A Simulation Study.

Authors:  Guilei Ma; Menghua Man; Yongqiang Zhang; Shanghe Liu
Journal:  Sensors (Basel)       Date:  2022-08-03       Impact factor: 3.847

8.  A novel memristive multilayer feedforward small-world neural network with its applications in PID control.

Authors:  Zhekang Dong; Shukai Duan; Xiaofang Hu; Lidan Wang; Hai Li
Journal:  ScientificWorldJournal       Date:  2014-08-14

Review 9.  Status and Prospects of ZnO-Based Resistive Switching Memory Devices.

Authors:  Firman Mangasa Simanjuntak; Debashis Panda; Kung-Hwa Wei; Tseung-Yuen Tseng
Journal:  Nanoscale Res Lett       Date:  2016-08-19       Impact factor: 4.703

10.  The case for rejecting the memristor as a fundamental circuit element.

Authors:  Isaac Abraham
Journal:  Sci Rep       Date:  2018-07-20       Impact factor: 4.379

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.