Literature DB >> 18432240

A topological Dirac insulator in a quantum spin Hall phase.

D Hsieh1, D Qian, L Wray, Y Xia, Y S Hor, R J Cava, M Z Hasan.   

Abstract

When electrons are subject to a large external magnetic field, the conventional charge quantum Hall effect dictates that an electronic excitation gap is generated in the sample bulk, but metallic conduction is permitted at the boundary. Recent theoretical models suggest that certain bulk insulators with large spin-orbit interactions may also naturally support conducting topological boundary states in the quantum limit, which opens up the possibility for studying unusual quantum Hall-like phenomena in zero external magnetic fields. Bulk Bi(1-x)Sb(x) single crystals are predicted to be prime candidates for one such unusual Hall phase of matter known as the topological insulator. The hallmark of a topological insulator is the existence of metallic surface states that are higher-dimensional analogues of the edge states that characterize a quantum spin Hall insulator. In addition to its interesting boundary states, the bulk of Bi(1-x)Sb(x) is predicted to exhibit three-dimensional Dirac particles, another topic of heightened current interest following the new findings in two-dimensional graphene and charge quantum Hall fractionalization observed in pure bismuth. However, despite numerous transport and magnetic measurements on the Bi(1-x)Sb(x) family since the 1960s, no direct evidence of either topological Hall states or bulk Dirac particles has been found. Here, using incident-photon-energy-modulated angle-resolved photoemission spectroscopy (IPEM-ARPES), we report the direct observation of massive Dirac particles in the bulk of Bi(0.9)Sb(0.1), locate the Kramers points at the sample's boundary and provide a comprehensive mapping of the Dirac insulator's gapless surface electron bands. These findings taken together suggest that the observed surface state on the boundary of the bulk insulator is a realization of the 'topological metal'. They also suggest that this material has potential application in developing next-generation quantum computing devices that may incorporate 'light-like' bulk carriers and spin-textured surface currents.

Entities:  

Year:  2008        PMID: 18432240     DOI: 10.1038/nature06843

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  175 in total

1.  Experimental realization of the topological Haldane model with ultracold fermions.

Authors:  Gregor Jotzu; Michael Messer; Rémi Desbuquois; Martin Lebrat; Thomas Uehlinger; Daniel Greif; Tilman Esslinger
Journal:  Nature       Date:  2014-11-13       Impact factor: 49.962

2.  Control over topological insulator photocurrents with light polarization.

Authors:  J W McIver; D Hsieh; H Steinberg; P Jarillo-Herrero; N Gedik
Journal:  Nat Nanotechnol       Date:  2011-12-04       Impact factor: 39.213

3.  Opportunities in chemistry and materials science for topological insulators and their nanostructures.

Authors:  Desheng Kong; Yi Cui
Journal:  Nat Chem       Date:  2011-10-24       Impact factor: 24.427

4.  Tunable Dirac cone in the topological insulator Bi(2-x)Sb(x)Te(3-y)Se(y).

Authors:  T Arakane; T Sato; S Souma; K Kosaka; K Nakayama; M Komatsu; T Takahashi; Zhi Ren; Kouji Segawa; Yoichi Ando
Journal:  Nat Commun       Date:  2012-01-24       Impact factor: 14.919

5.  Band structure engineering in (Bi(1-x)Sb(x))(2)Te(3) ternary topological insulators.

Authors:  Jinsong Zhang; Cui-Zu Chang; Zuocheng Zhang; Jing Wen; Xiao Feng; Kang Li; Minhao Liu; Ke He; Lili Wang; Xi Chen; Qi-Kun Xue; Xucun Ma; Yayu Wang
Journal:  Nat Commun       Date:  2011-12-06       Impact factor: 14.919

6.  Josephson supercurrent through a topological insulator surface state.

Authors:  M Veldhorst; M Snelder; M Hoek; T Gang; V K Guduru; X L Wang; U Zeitler; W G van der Wiel; A A Golubov; H Hilgenkamp; A Brinkman
Journal:  Nat Mater       Date:  2012-02-19       Impact factor: 43.841

7.  Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment.

Authors:  Chaoyu Chen; Shaolong He; Hongming Weng; Wentao Zhang; Lin Zhao; Haiyun Liu; Xiaowen Jia; Daixiang Mou; Shanyu Liu; Junfeng He; Yingying Peng; Ya Feng; Zhuojin Xie; Guodong Liu; Xiaoli Dong; Jun Zhang; Xiaoyang Wang; Qinjun Peng; Zhimin Wang; Shenjin Zhang; Feng Yang; Chuangtian Chen; Zuyan Xu; Xi Dai; Zhong Fang; X J Zhou
Journal:  Proc Natl Acad Sci U S A       Date:  2012-02-21       Impact factor: 11.205

8.  Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi₂Se₃ topological insulator nanoribbons.

Authors:  Seung Sae Hong; Judy J Cha; Desheng Kong; Yi Cui
Journal:  Nat Commun       Date:  2012-03-27       Impact factor: 14.919

9.  Transmission of topological surface states through surface barriers.

Authors:  Jungpil Seo; Pedram Roushan; Haim Beidenkopf; Y S Hor; R J Cava; Ali Yazdani
Journal:  Nature       Date:  2010-07-15       Impact factor: 49.962

10.  Tunable multifunctional topological insulators in ternary Heusler compounds.

Authors:  Stanislav Chadov; Xiaoliang Qi; Jürgen Kübler; Gerhard H Fecher; Claudia Felser; Shou Cheng Zhang
Journal:  Nat Mater       Date:  2010-05-30       Impact factor: 43.841

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