Literature DB >> 18376870

Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography.

Armando Rastelli1, Mathieu Stoffel, Angelo Malachias, Tsvetelina Merdzhanova, Georgios Katsaros, Klaus Kern, Till H Metzger, Oliver G Schmidt.   

Abstract

Scanning probe microscopy combined with selective wet chemical etching is employed to quantitatively determine the full three-dimensional (3D) composition profiles of single strained SiGe/Si(001) islands. The technique allows us to simultaneously obtain 3D profiles for both coherent and dislocated islands and to collect data with large statistics. Lateral and vertical composition gradients are observed, and their origin is discussed. X-ray scattering measurements performed on a large sample area are used to validate the results.

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Year:  2008        PMID： 18376870     DOI： 10.1021/nl080290y

Source DB:  PubMed          Journal:  Nano Lett        ISSN： 1530-6984            Impact factor:   11.189


  8 in total

1.  Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography.

Authors:  F Pezzoli; M Stoffel; T Merdzhanova; A Rastelli; Og Schmidt
Journal:  Nanoscale Res Lett       Date:  2009-06-06       Impact factor: 4.703

2.  Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands.

Authors:  M Brehm; M Grydlik; F Hackl; E Lausecker; T Fromherz; G Bauer
Journal:  Nanoscale Res Lett       Date:  2010-08-05       Impact factor: 4.703

3.  Ordered Arrays of SiGe Islands from Low-Energy PECVD.

Authors:  M Bollani; E Bonera; D Chrastina; A Fedorov; V Montuori; A Picco; A Tagliaferri; G Vanacore; R Sordan
Journal:  Nanoscale Res Lett       Date:  2010-09-07       Impact factor: 4.703

4.  Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface.

Authors:  Giovanni Maria Vanacore; Maurizio Zani; Monica Bollani; Davide Colombo; Giovanni Isella; Johann Osmond; Roman Sordan; Alberto Tagliaferri
Journal:  Nanoscale Res Lett       Date:  2010-09-30       Impact factor: 4.703

5.  Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands.

Authors:  Moritz Brehm; Herbert Lichtenberger; Thomas Fromherz; Gunther Springholz
Journal:  Nanoscale Res Lett       Date:  2011-01-12       Impact factor: 4.703

6.  Direct Determination of 3D Distribution of Elemental Composition in Single Semiconductor Nanoislands by Scanning Auger Microscopy.

Authors:  Semyon S Ponomaryov; Volodymyr O Yukhymchuk; Peter M Lytvyn; Mykhailo Ya Valakh
Journal:  Nanoscale Res Lett       Date:  2016-02-24       Impact factor: 4.703

7.  Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy.

Authors:  Andrea Picco; Emiliano Bonera; Fabio Pezzoli; Emanuele Grilli; Oliver G Schmidt; Fabio Isa; Stefano Cecchi; Mario Guzzi
Journal:  Nanoscale Res Lett       Date:  2012-11-21       Impact factor: 4.703

8.  Investigating the Composition and Conductance Distributions on Highly GeSi Mixed Quantum Dots and Inside Oxidation Problem.

Authors:  F F Ye; Y J Ma; Y Lv; Z M Jiang; X J Yang
Journal:  Nanoscale Res Lett       Date:  2015-12-09       Impact factor: 4.703
  8 in total

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