Literature DB >> 18356511

Materials science. Who wins the nonvolatile memory race?

G I Meijer1.   

Abstract

Year:  2008        PMID： 18356511     DOI： 10.1126/science.1153909

Source DB:  PubMed          Journal:  Science        ISSN： 0036-8075            Impact factor:   47.728


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  25 in total

1.  Applied physics: A leak of information.

Authors:  Pavlo Zubko; Jean-Marc Triscone
Journal:  Nature       Date:  2009-07-02       Impact factor: 49.962

2.  Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

Authors:  Deok-Hwang Kwon; Kyung Min Kim; Jae Hyuck Jang; Jong Myeong Jeon; Min Hwan Lee; Gun Hwan Kim; Xiang-Shu Li; Gyeong-Su Park; Bora Lee; Seungwu Han; Miyoung Kim; Cheol Seong Hwang
Journal:  Nat Nanotechnol       Date:  2010-01-17       Impact factor: 39.213

3.  Oxygen doping of HTSC and resistive switching in HTSC-based heterostructures.

Authors:  Natalia A Tulina; Ivan Yu Borisenko; Andrey A Ivanov; Andrey M Ionov; Ivan M Shmytko
Journal:  Springerplus       Date:  2013-08-15

4.  In situ imaging of the conducting filament in a silicon oxide resistive switch.

Authors:  Jun Yao; Lin Zhong; Douglas Natelson; James M Tour
Journal:  Sci Rep       Date:  2012-01-31       Impact factor: 4.379

5.  Emulating short-term synaptic dynamics with memristive devices.

Authors:  Radu Berdan; Eleni Vasilaki; Ali Khiat; Giacomo Indiveri; Alexandru Serb; Themistoklis Prodromakis
Journal:  Sci Rep       Date:  2016-01-04       Impact factor: 4.379

6.  Scaling effect on unipolar and bipolar resistive switching of metal oxides.

Authors:  Takeshi Yanagida; Kazuki Nagashima; Keisuke Oka; Masaki Kanai; Annop Klamchuen; Bae Ho Park; Tomoji Kawai
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

7.  Multimode resistive switching in single ZnO nanoisland system.

Authors:  Jing Qi; Mario Olmedo; Jian-Guo Zheng; Jianlin Liu
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

8.  Characterization of electroforming-free titanium dioxide memristors.

Authors:  John Paul Strachan; J Joshua Yang; L A Montoro; C A Ospina; A J Ramirez; A L D Kilcoyne; Gilberto Medeiros-Ribeiro; R Stanley Williams
Journal:  Beilstein J Nanotechnol       Date:  2013-08-07       Impact factor: 3.649

9.  Electric-field-induced metal maintained by current of the Mott insulator Ca2RuO4.

Authors:  Fumihiko Nakamura; Mariko Sakaki; Yuya Yamanaka; Sho Tamaru; Takashi Suzuki; Yoshiteru Maeno
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

10.  Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio.

Authors:  Hsin-Wei Huang; Chen-Fang Kang; Fang-I Lai; Jr-Hau He; Su-Jien Lin; Yu-Lun Chueh
Journal:  Nanoscale Res Lett       Date:  2013-11-16       Impact factor: 4.703
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