Literature DB >> 18290140

Acoustoelectric detection of ultrasound power with composite piezoelectric and semiconductor devices.

D R Dietz1, L J Busse, M J Fife.   

Abstract

The acoustoelectric interaction between an ultrasound wave propagating in a thin piezoelectric plate and an adjacent semiconductor results in a current that is proportional to the ultrasound intensity. These devices, inherently insensitive to the phase of the acoustic wavefront, can be used for large-area total power meters as well as spot intensity meters. They have broadband response and are capable of following the envelope of typical diagnostic imaging pulses. A previously derived model describing the interaction is reviewed. Experimental results obtained with several detectors are presented, including sensitivity and frequency response.

Year:  1988        PMID: 18290140     DOI: 10.1109/58.4164

Source DB:  PubMed          Journal:  IEEE Trans Ultrason Ferroelectr Freq Control        ISSN: 0885-3010            Impact factor:   2.725


  2 in total

1.  Inexpensive Acoustoelectric Hydrophone For Mapping High Intensity Ultrasonic Fields.

Authors:  Russell S Witte; Tim Hall; Ragner Olafsson; Sheng-Wen Huang; Matthew O'Donnell
Journal:  J Appl Phys       Date:  2008       Impact factor: 2.546

2.  Electric Current Dependent Fracture in GaN Piezoelectric Semiconductor Ceramics.

Authors:  Guoshuai Qin; Chunsheng Lu; Xin Zhang; Minghao Zhao
Journal:  Materials (Basel)       Date:  2018-10-16       Impact factor: 3.623

  2 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.