| Literature DB >> 18260664 |
Sankar Subramanian1, Sung Kyu Park, Sean R Parkin, Vitaly Podzorov, Thomas N Jackson, John E Anthony.
Abstract
We report dramatic improvements in the stability and crystallinity arising from partial fluorination of soluble anthradithiophene derivatives. These fluorinated materials still behave as p-type semiconductors but with dramatic increases in thermal and photostability compared to the non-fluorinated derivatives. The triethylsilyl-substituted material forms highly crystalline films even from spin-cast solutions, leading to devices with maximum hole mobility greater than 1.0 cm(2)/V s. In contrast, the triisopropylsilyl derivative forms large, high-quality crystals that could serve as the substrate for transistor fabrication. For this compound, mobility as high as 0.1 cm(2)/V s was measured on the free-standing crystal.Entities:
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Year: 2008 PMID: 18260664 DOI: 10.1021/ja073235k
Source DB: PubMed Journal: J Am Chem Soc ISSN: 0002-7863 Impact factor: 15.419