Literature DB >> 18254603

Tunneling anisotropic magnetoresistance in Co/AlOx/Au tunnel junctions.

R S Liu1, L Michalak, C M Canali, L Samuelson, H Pettersson.   

Abstract

We observe spin-valve-like effects in nanoscaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer.

Entities:  

Year:  2008        PMID: 18254603     DOI: 10.1021/nl072985p

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  1 in total

1.  Large room-temperature tunneling anisotropic magnetoresistance and electroresistance in single ferromagnet/Nb:SrTiO3 Schottky devices.

Authors:  Alexander M Kamerbeek; Roald Ruiter; Tamalika Banerjee
Journal:  Sci Rep       Date:  2018-01-22       Impact factor: 4.379

  1 in total

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