Literature DB >> 18233547

Half-metallic silicon nanowires: first-principles calculations.

E Durgun1, D Cakir, N Akman, S Ciraci.   

Abstract

From first-principles calculations, we predict that specific transition metal (TM) atom-adsorbed silicon nanowires have a half-metallic ground state. They are insulators for one spin direction, but show metallic properties for the opposite spin direction. At high coverage of TM atoms, ferromagnetic silicon nanowires become metallic for both spin directions with high magnetic moment and may have also significant spin polarization at the Fermi level. The spin-dependent electronic properties can be engineered by changing the type of adsorbed TM atoms, as well as the diameter of the nanowire. Present results are not only of scientific interest, but also can initiate new research on spintronic applications of silicon nanowires.

Entities:  

Year:  2007        PMID: 18233547     DOI: 10.1103/PhysRevLett.99.256806

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  3 in total

1.  Observation of room-temperature negative differential resistance in Gd-doped Si nanowires on Si(110) surface.

Authors:  Ie-Hong Hong; Tsung-Ming Chen; Yung-Feng Tsai
Journal:  Appl Phys Lett       Date:  2012-08-01       Impact factor: 3.791

2.  Spin filtering with Mn-doped Ge-core/Si-shell nanowires.

Authors:  Sandip Aryal; Ranjit Pati
Journal:  Nanoscale Adv       Date:  2020-02-28

3.  Stability of the V and Co atomic wires: a first-principles study.

Authors:  Shu-Lan Liu; Bao-Ru Wang; Qing-Min Ma; Zun Xie
Journal:  RSC Adv       Date:  2018-12-12       Impact factor: 4.036

  3 in total

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