Literature DB >> 18233473

Measurement of scattering rate and minimum conductivity in graphene.

Y-W Tan1, Y Zhang, K Bolotin, Y Zhao, S Adam, E H Hwang, S Das Sarma, H L Stormer, P Kim.   

Abstract

The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of 1-20x10(3) cm2/V sec. Comparing the experimental data with the theoretical transport calculations based on charged impurity scattering, we estimate that the impurity concentration in the samples varies from 2-15x10(11) cm(-2). In the low carrier density limit, the conductivity exhibits values in the range of 2-12e2/h, which can be related to the residual density induced by the inhomogeneous charge distribution in the samples. The shape of the conductivity curves indicates that high mobility samples contain some short-range disorder whereas low mobility samples are dominated by long-range scatterers.

Entities:  

Year:  2007        PMID: 18233473     DOI: 10.1103/PhysRevLett.99.246803

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  39 in total

1.  Graphene-Dielectric Integration for Graphene Transistors.

Authors:  Lei Liao; Xiangfeng Duan
Journal:  Mater Sci Eng R Rep       Date:  2010-11-22       Impact factor: 36.214

2.  Evidence for a spontaneous gapped state in ultraclean bilayer graphene.

Authors:  Wenzhong Bao; Jairo Velasco; Fan Zhang; Lei Jing; Brian Standley; Dmitry Smirnov; Marc Bockrath; Allan H MacDonald; Chun Ning Lau
Journal:  Proc Natl Acad Sci U S A       Date:  2012-06-08       Impact factor: 11.205

3.  High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors.

Authors:  Lei Liao; Jingwei Bai; Yongquan Qu; Yung-chen Lin; Yujing Li; Yu Huang; Xiangfeng Duan
Journal:  Proc Natl Acad Sci U S A       Date:  2010-03-22       Impact factor: 11.205

4.  Electrical control of the valley Hall effect in bilayer MoS2 transistors.

Authors:  Jieun Lee; Kin Fai Mak; Jie Shan
Journal:  Nat Nanotechnol       Date:  2016-01-25       Impact factor: 39.213

5.  High thermoelectricpower factor in graphene/hBN devices.

Authors:  Junxi Duan; Xiaoming Wang; Xinyuan Lai; Guohong Li; Kenji Watanabe; Takashi Taniguchi; Mona Zebarjadi; Eva Y Andrei
Journal:  Proc Natl Acad Sci U S A       Date:  2016-11-23       Impact factor: 11.205

6.  Universal Fermi-surface anisotropy renormalization for interacting Dirac fermions with long-range interactions.

Authors:  Jia Ning Leaw; Ho-Kin Tang; Maxim Trushin; Fakher F Assaad; Shaffique Adam
Journal:  Proc Natl Acad Sci U S A       Date:  2019-12-09       Impact factor: 11.205

7.  Measurement of the quantum capacitance of graphene.

Authors:  Jilin Xia; Fang Chen; Jinghong Li; Nongjian Tao
Journal:  Nat Nanotechnol       Date:  2009-07-05       Impact factor: 39.213

8.  Modeling Electrolytically Top-Gated Graphene.

Authors:  Z L Mišković; Nitin Upadhyaya
Journal:  Nanoscale Res Lett       Date:  2010-01-07       Impact factor: 4.703

9.  Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel.

Authors:  Ryota Negishi; Katsuma Yamamoto; Hirofumi Tanaka; Seyed Ali Mojtahedzadeh; Nobuya Mori; Yoshihiro Kobayashi
Journal:  Sci Rep       Date:  2021-05-13       Impact factor: 4.379

10.  N-type graphene induced by dissociative H₂ adsorption at room temperature.

Authors:  Byung Hoon Kim; Sung Ju Hong; Seung Jae Baek; Hu Young Jeong; Noejung Park; Muyoung Lee; Sang Wook Lee; Min Park; Seung Wan Chu; Hyeon Suk Shin; Jeongmin Lim; Jeong Chul Lee; Yongseok Jun; Yung Woo Park
Journal:  Sci Rep       Date:  2012-09-25       Impact factor: 4.379

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