Defect cores investigated by x-ray scattering close to forbidden reflections in silicon.

A new x-ray scattering method is presented making possible the detection of defects and the investigation of the structure of their cores. The method uses diffuse x-ray scattering measured close to a forbidden diffraction peak, in which the intensity scattered from the distorted crystal lattice around the defects is minimized. As a first example of this nondestructive method we demonstrate how the local compression of the extra {111} double planes in extrinsic stacking faults in Si can be probed and quantified using a continuum approach for the simulation of the displacements. The results of the theory developed are found to be in very good agreement with atomistic simulations and experiments.