Literature DB >> 18232793

Changes in electronic structure and chemical bonding upon crystallization of the phase change material GeSb2Te4.

A Klein1, H Dieker, B Späth, P Fons, A Kolobov, C Steimer, M Wuttig.   

Abstract

High-resolution photoelectron spectroscopy of in situ prepared films of GeSb2Te4 reveals significant differences in electronic and chemical structure between the amorphous and the crystalline phase. Evidence for two different chemical environments of Ge and Sb in the amorphous structure is found. This observation can explain the pronounced property contrast between both phases and provides new insight into the formation of the amorphous state.

Entities:  

Year:  2008        PMID: 18232793     DOI: 10.1103/PhysRevLett.100.016402

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  5 in total

1.  Disorder-induced localization in crystalline phase-change materials.

Authors:  T Siegrist; P Jost; H Volker; M Woda; P Merkelbach; C Schlockermann; M Wuttig
Journal:  Nat Mater       Date:  2011-01-09       Impact factor: 43.841

2.  Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials.

Authors:  Dmitry Shakhvorostov; Razvan A Nistor; Lia Krusin-Elbaum; Glenn J Martyna; Dennis M Newns; Bruce G Elmegreen; Xiao-hu Liu; Zak E Hughes; Sujata Paul; Cyril Cabral; Simone Raoux; David B Shrekenhamer; Dimitri N Basov; Young Song; Martin H Müser
Journal:  Proc Natl Acad Sci U S A       Date:  2009-06-22       Impact factor: 11.205

3.  Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy.

Authors:  Adriano Díaz Fattorini; Caroline Chèze; Iñaki López García; Christian Petrucci; Marco Bertelli; Flavia Righi Riva; Simone Prili; Stefania M S Privitera; Marzia Buscema; Antonella Sciuto; Salvatore Di Franco; Giuseppe D'Arrigo; Massimo Longo; Sara De Simone; Valentina Mussi; Ernesto Placidi; Marie-Claire Cyrille; Nguyet-Phuong Tran; Raffaella Calarco; Fabrizio Arciprete
Journal:  Nanomaterials (Basel)       Date:  2022-04-13       Impact factor: 5.719

4.  Enhanced reliability of phase-change memory via modulation of local structure and chemical bonding by incorporating carbon in Ge2Sb2Te5.

Authors:  Jeong Hwa Han; Hun Jeong; Hanjin Park; Hoedon Kwon; Dasol Kim; Donghyeok Lim; Seung Jae Baik; Young-Kyun Kwon; Mann-Ho Cho
Journal:  RSC Adv       Date:  2021-06-25       Impact factor: 4.036

5.  Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys.

Authors:  Caroline Chèze; Flavia Righi Riva; Giulia Di Bella; Ernesto Placidi; Simone Prili; Marco Bertelli; Adriano Diaz Fattorini; Massimo Longo; Raffaella Calarco; Marco Bernasconi; Omar Abou El Kheir; Fabrizio Arciprete
Journal:  Nanomaterials (Basel)       Date:  2022-03-18       Impact factor: 5.076

  5 in total

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