| Literature DB >> 18197718 |
Ivan Shorubalko1, Renaud Leturcq, Andreas Pfund, David Tyndall, Roland Krischek, Silke Schön, Klaus Ensslin.
Abstract
A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot in an InAs nanowire. The quantum dot is strongly coupled to the underlying point contact that is used as a charge detector. The addition of one electron to the quantum dot leads to a change of the conductance of the charge detector by typically 20%. The charge sensitivity of the detector is used to measure Coulomb diamonds as well as charging events outside the dot. Charge stability diagrams measured by transport through the quantum dot and charge detection merge perfectly.Entities:
Mesh:
Substances:
Year: 2008 PMID: 18197718 DOI: 10.1021/nl072522j
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189