Literature DB >> 18154366

Size limits on doping phosphorus into silicon nanocrystals.

T-L Chan1, Murilo L Tiago, Efthimios Kaxiras, James R Chelikowsky.   

Abstract

We studied the electronic properties of phosphorus-doped silicon nanocrystals using the real-space first-principles pseudopotential method. We simulated nanocrystals with a diameter of up to 6 nm and made a direct comparison with experimental measurement for the first time for these systems. Our calculated size dependence of hyperfine splitting was in excellent agreement with experimental data. We also found a critical nanocrystal size below which we predicted that the dopant will be ejected to the surface.

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Year:  2007        PMID: 18154366     DOI: 10.1021/nl072997a

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  7 in total

1.  Diffusion doping route to plasmonic Si/SiO x nanoparticles.

Authors:  Sergei S Bubenov; Sergey G Dorofeev; Andrei A Eliseev; Nikolay N Kononov; Alexey V Garshev; Natalia E Mordvinova; Oleg I Lebedev
Journal:  RSC Adv       Date:  2018-05-23       Impact factor: 4.036

Review 2.  Silicon and germanium nanocrystals: properties and characterization.

Authors:  Ivana Capan; Alexandra Carvalho; José Coutinho
Journal:  Beilstein J Nanotechnol       Date:  2014-10-16       Impact factor: 3.649

3.  Location and Electronic Nature of Phosphorus in the Si Nanocrystal--SiO2 System.

Authors:  Dirk König; Sebastian Gutsch; Hubert Gnaser; Michael Wahl; Michael Kopnarski; Jörg Göttlicher; Ralph Steininger; Margit Zacharias; Daniel Hiller
Journal:  Sci Rep       Date:  2015-05-22       Impact factor: 4.379

4.  Doping nanoparticles using pulsed laser ablation in a liquid containing the doping agent.

Authors:  Arsène Chemin; Julien Lam; Gaétan Laurens; Florian Trichard; Vincent Motto-Ros; Gilles Ledoux; Vítězslav Jarý; Valentyn Laguta; Martin Nikl; Christophe Dujardin; David Amans
Journal:  Nanoscale Adv       Date:  2019-08-30

5.  Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement.

Authors:  Chang Ke; Weiguang Zhu; Zheng Zhang; Eng Soon Tok; Bo Ling; Jisheng Pan
Journal:  Sci Rep       Date:  2015-11-30       Impact factor: 4.379

6.  Phosphorus Doping in Si Nanocrystals/SiO2 multilayers and Light Emission with Wavelength compatible for Optical Telecommunication.

Authors:  Peng Lu; Weiwei Mu; Jun Xu; Xiaowei Zhang; Wenping Zhang; Wei Li; Ling Xu; Kunji Chen
Journal:  Sci Rep       Date:  2016-03-09       Impact factor: 4.379

7.  Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating.

Authors:  Dirk König; Daniel Hiller; Noël Wilck; Birger Berghoff; Merlin Müller; Sangeeta Thakur; Giovanni Di Santo; Luca Petaccia; Joachim Mayer; Sean Smith; Joachim Knoch
Journal:  Beilstein J Nanotechnol       Date:  2018-08-23       Impact factor: 3.649

  7 in total

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