Organophosphonate self-assembled monolayers for gate dielectric surface modification of pentacene-based organic thin-film transistors: a comparative study.

Organic thin-film transistors using pentacene as the semiconductor were fabricated on silicon. A series of phosphonate-based self-assembled monolayers (SAMs) was used as a buffer between the silicon dioxide gate dielectric and the active pentacene channel region. Octadecylphosphonate, (quarterthiophene)phosphonate, and (9-anthracene)phosphonate SAMs were examined. Significant improvements in the sub-threshold slope and threshold voltage were observed for each SAM treatment as compared to control devices fabricated without the buffer. These improvements were related to structural motif relationships between the pentacene semiconductor and the SAM constituents. Measured transistor properties were consistent with a reduction in density of charge trapping states at the semiconductor-dielectric interface that was effected by introduction of the self-assembled monolayer.