| Literature DB >> 17995344 |
A Carvalho1, R Jones, C Janke, J P Goss, P R Briddon, J Coutinho, S Oberg.
Abstract
Low-temperature radiation damage in n- and p-type Ge is strikingly different, reflecting the charge-dependent properties of vacancies and self-interstitials. We find, using density functional theory, that in Ge the interstitial is bistable, preferring a split configuration when neutral and an open cage configuration when positively charged. The split configuration is inert while the cage configuration acts as a double donor. We evaluate the migration energies of the defects and show that the theory is able to explain the principal results of low-temperature electron-irradiation experiments.Entities:
Year: 2007 PMID: 17995344 DOI: 10.1103/PhysRevLett.99.175502
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161