Literature DB >> 17995344

Self-interstitial in germanium.

A Carvalho1, R Jones, C Janke, J P Goss, P R Briddon, J Coutinho, S Oberg.   

Abstract

Low-temperature radiation damage in n- and p-type Ge is strikingly different, reflecting the charge-dependent properties of vacancies and self-interstitials. We find, using density functional theory, that in Ge the interstitial is bistable, preferring a split configuration when neutral and an open cage configuration when positively charged. The split configuration is inert while the cage configuration acts as a double donor. We evaluate the migration energies of the defects and show that the theory is able to explain the principal results of low-temperature electron-irradiation experiments.

Entities:  

Year:  2007        PMID: 17995344     DOI: 10.1103/PhysRevLett.99.175502

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Dynamic annealing in Ge studied by pulsed ion beams.

Authors:  J B Wallace; L B Bayu Aji; L Shao; S O Kucheyev
Journal:  Sci Rep       Date:  2017-10-13       Impact factor: 4.379

2.  Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n-p Junctions by Applied Stress.

Authors:  Igor V Korobeinikov; Natalia V Morozova; Vladimir V Shchennikov; Sergey V Ovsyannikov
Journal:  Sci Rep       Date:  2017-03-14       Impact factor: 4.379

  2 in total

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