Literature DB >> 17995293

Strain-gradient-induced polarization in SrTiO3 single crystals.

P Zubko1, G Catalan, A Buckley, P R L Welche, J F Scott.   

Abstract

Piezoelectricity is inherent only in noncentrosymmetric materials, but a piezoelectric response can also be obtained in centrosymmetric crystals if subjected to inhomogeneous deformation. This phenomenon, known as flexoelectricity, can significantly affect the functional properties of insulators, particularly thin films of high permittivity materials. We have measured strain-gradient-induced polarization in single crystals of paraelectric SrTiO3 as a function of temperature and orientation down to and below the 105 K phase transition. Estimates were obtained for all the components of the flexoelectric tensor, and calculations based on these indicate that local polarization around defects in SrTiO3 may exceed the largest ferroelectric polarizations. A sign reversal of the flexoelectric response detected below the phase transition suggests that the ferroelastic domain walls of SrTiO3 may be polar.

Year:  2007        PMID: 17995293     DOI: 10.1103/PhysRevLett.99.167601

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  34 in total

1.  Atomic-scale evolution of modulated phases at the ferroelectric-antiferroelectric morphotropic phase boundary controlled by flexoelectric interaction.

Authors:  A Y Borisevich; E A Eliseev; A N Morozovska; C-J Cheng; J-Y Lin; Y H Chu; D Kan; I Takeuchi; V Nagarajan; S V Kalinin
Journal:  Nat Commun       Date:  2012-04-10       Impact factor: 14.919

2.  Flexoelectric rotation of polarization in ferroelectric thin films.

Authors:  G Catalan; A Lubk; A H G Vlooswijk; E Snoeck; C Magen; A Janssens; G Rispens; G Rijnders; D H A Blank; B Noheda
Journal:  Nat Mater       Date:  2011-10-16       Impact factor: 43.841

3.  A flexoelectric microelectromechanical system on silicon.

Authors:  Umesh Kumar Bhaskar; Nirupam Banerjee; Amir Abdollahi; Zhe Wang; Darrell G Schlom; Guus Rijnders; Gustau Catalan
Journal:  Nat Nanotechnol       Date:  2015-11-16       Impact factor: 39.213

4.  Multiferroics: Focusing light on flexoelectricity.

Authors:  Sergei V Kalinin; Anna N Morozovska
Journal:  Nat Nanotechnol       Date:  2015-08-31       Impact factor: 39.213

5.  Multiferroics: A way forward along domain walls.

Authors:  Hélène Béa; Patrycja Paruch
Journal:  Nat Mater       Date:  2009-03       Impact factor: 43.841

6.  Conduction at domain walls in oxide multiferroics.

Authors:  J Seidel; L W Martin; Q He; Q Zhan; Y-H Chu; A Rother; M E Hawkridge; P Maksymovych; P Yu; M Gajek; N Balke; S V Kalinin; S Gemming; F Wang; G Catalan; J F Scott; N A Spaldin; J Orenstein; R Ramesh
Journal:  Nat Mater       Date:  2009-01-25       Impact factor: 43.841

7.  Sketched oxide single-electron transistor.

Authors:  Guanglei Cheng; Pablo F Siles; Feng Bi; Cheng Cen; Daniela F Bogorin; Chung Wung Bark; Chad M Folkman; Jae-Wan Park; Chang-Beom Eom; Gilberto Medeiros-Ribeiro; Jeremy Levy
Journal:  Nat Nanotechnol       Date:  2011-04-17       Impact factor: 39.213

Review 8.  Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications.

Authors:  Ying Wang; Weijin Chen; Biao Wang; Yue Zheng
Journal:  Materials (Basel)       Date:  2014-09-11       Impact factor: 3.623

9.  Mixed finite-element formulations in piezoelectricity and flexoelectricity.

Authors:  Sheng Mao; Prashant K Purohit; Nikolaos Aravas
Journal:  Proc Math Phys Eng Sci       Date:  2016-06       Impact factor: 2.704

10.  Enhancement of the anisotropic photocurrent in ferroelectric oxides by strain gradients.

Authors:  Kanghyun Chu; Byung-Kweon Jang; Ji Ho Sung; Yoon Ah Shin; Eui-Sup Lee; Kyung Song; Jin Hong Lee; Chang-Su Woo; Seung Jin Kim; Si-Young Choi; Tae Yeong Koo; Yong-Hyun Kim; Sang-Ho Oh; Moon-Ho Jo; Chan-Ho Yang
Journal:  Nat Nanotechnol       Date:  2015-08-31       Impact factor: 39.213

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