| Literature DB >> 17930919 |
J Wenisch1, C Gould, L Ebel, J Storz, K Pappert, M J Schmidt, C Kumpf, G Schmidt, K Brunner, L W Molenkamp.
Abstract
We report control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using reciprocal space mapping by x-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and a uniaxial easy axis in the direction where pseudomorphic conditions are retained.Year: 2007 PMID： 17930919 DOI： 10.1103/PhysRevLett.99.077201
Source DB: PubMed Journal: Phys Rev Lett ISSN： 0031-9007 Impact factor: 9.161