Literature DB >> 17930689

Why does wurtzite form in nanowires of III-V zinc blende semiconductors?

Frank Glas1, Jean-Christophe Harmand, Gilles Patriarche.   

Abstract

We develop a nucleation-based model to explain the formation of the wurtzite phase during the catalyzed growth of freestanding nanowires of zinc blende semiconductors. We show that in vapor-liquid-solid nanowire growth, nucleation generally occurs preferentially at the triple phase line. This entails major differences between zinc blende and wurtzite nuclei. Depending on the pertinent interface energies, wurtzite nucleation is favored at high liquid supersaturation. This explains our systematic observation of zinc blende during early growth of gold-catalyzed GaAs nanowires.

Entities:  

Year:  2007        PMID: 17930689     DOI: 10.1103/PhysRevLett.99.146101

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  34 in total

1.  Controlled polytypic and twin-plane superlattices in iii-v nanowires.

Authors:  P Caroff; K A Dick; J Johansson; M E Messing; K Deppert; L Samuelson
Journal:  Nat Nanotechnol       Date:  2008-11-30       Impact factor: 39.213

2.  Materials science: How crystals get an edge.

Authors:  Anna Fontcuberta i Morral
Journal:  Nature       Date:  2016-03-17       Impact factor: 49.962

3.  Linearly arranged polytypic CZTSSe nanocrystals.

Authors:  Feng-Jia Fan; Liang Wu; Ming Gong; Shi You Chen; Guang Yao Liu; Hong-Bin Yao; Hai-Wei Liang; Yi-Xiu Wang; Shu-Hong Yu
Journal:  Sci Rep       Date:  2012-12-11       Impact factor: 4.379

4.  Understanding the Morphological Evolution of InSb Nanoflags Synthesized in Regular Arrays by Chemical Beam Epitaxy.

Authors:  Isha Verma; Valentina Zannier; Vladimir G Dubrovskii; Fabio Beltram; Lucia Sorba
Journal:  Nanomaterials (Basel)       Date:  2022-03-26       Impact factor: 5.076

5.  Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures.

Authors:  Suixing Shi; Zhi Zhang; Zhenyu Lu; Haibo Shu; Pingping Chen; Ning Li; Jin Zou; Wei Lu
Journal:  Nanoscale Res Lett       Date:  2015-03-01       Impact factor: 4.703

6.  Polarized recombination of acoustically transported carriers in GaAs nanowires.

Authors:  Michael Möller; Alberto Hernández-Mínguez; Steffen Breuer; Carsten Pfüller; Oliver Brandt; Mauricio M de Lima; Andrés Cantarero; Lutz Geelhaar; Henning Riechert; Paulo V Santos
Journal:  Nanoscale Res Lett       Date:  2012-05-14       Impact factor: 4.703

7.  Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses.

Authors:  Hong-Yi Xu; Ya-Nan Guo; Wen Sun; Zhi-Ming Liao; Timothy Burgess; Hao-Feng Lu; Qiang Gao; Hark Hoe Tan; Chennupati Jagadish; Jin Zou
Journal:  Nanoscale Res Lett       Date:  2012-10-24       Impact factor: 4.703

8.  Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate.

Authors:  Masahito Yamaguchi; Ji-Hyun Paek; Hiroshi Amano
Journal:  Nanoscale Res Lett       Date:  2012-10-08       Impact factor: 4.703

9.  Structural and electrical properties of catalyst-free Si-doped InAs nanowires formed on Si(111).

Authors:  Dong Woo Park; Seong Gi Jeon; Cheul-Ro Lee; Sang Jun Lee; Jae Yong Song; Jun Oh Kim; Sam Kyu Noh; Jae-Young Leem; Jin Soo Kim
Journal:  Sci Rep       Date:  2015-11-19       Impact factor: 4.379

10.  Gold-free ternary III-V antimonide nanowire arrays on silicon: twin-free down to the first bilayer.

Authors:  Sònia Conesa-Boj; Dominik Kriegner; Xiang-Lei Han; Sébastien Plissard; Xavier Wallart; Julian Stangl; Anna Fontcuberta i Morral; Philippe Caroff
Journal:  Nano Lett       Date:  2013-12-18       Impact factor: 11.189

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