Literature DB >> 17930460

Weak localization in ferromagnetic (Ga,Mn)as nanostructures.

D Neumaier1, K Wagner, S Geissler, U Wurstbauer, J Sadowski, W Wegscheider, D Weiss.   

Abstract

We report on the observation of weak localization in arrays of (Ga,Mn)As nanowires at millikelvin temperatures. The corresponding phase coherence length L phi is typically between 100 and 200 nm at 20 mK. Strong spin-orbit interaction in the material is manifested by a weak antilocalization correction around zero magnetic field.

Year:  2007        PMID: 17930460     DOI: 10.1103/PhysRevLett.99.116803

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  3 in total

1.  Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy.

Authors:  Shih-Wei Lin; Yue-Han Wu; Li Chang; Chi-Te Liang; Sheng-Di Lin
Journal:  Nanoscale Res Lett       Date:  2015-02-18       Impact factor: 4.703

2.  A room-temperature magnetic semiconductor from a ferromagnetic metallic glass.

Authors:  Wenjian Liu; Hongxia Zhang; Jin-An Shi; Zhongchang Wang; Cheng Song; Xiangrong Wang; Siyuan Lu; Xiangjun Zhou; Lin Gu; Dmitri V Louzguine-Luzgin; Mingwei Chen; Kefu Yao; Na Chen
Journal:  Nat Commun       Date:  2016-12-08       Impact factor: 14.919

Review 3.  Mn-doped Ge and Si: A Review of the Experimental Status.

Authors:  Shengqiang Zhou; Heidemarie Schmidt
Journal:  Materials (Basel)       Date:  2010-11-26       Impact factor: 3.623

  3 in total

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