Literature DB >> 17892317

Three-dimensional Si/Ge quantum dot crystals.

Detlev Grützmacher1, Thomas Fromherz, Christian Dais, Julian Stangl, Elisabeth Müller, Yasin Ekinci, Harun H Solak, Hans Sigg, Rainer T Lechner, Eugen Wintersberger, Stefan Birner, Vaclav Holý, Günther Bauer.   

Abstract

Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (3D) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered quantum dots can be regarded as artificial crystal.

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Year:  2007        PMID: 17892317     DOI: 10.1021/nl0717199

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  8 in total

1.  A complete physical germanium-on-silicon quantum dot self-assembly process.

Authors:  Amro Alkhatib; Ammar Nayfeh
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

2.  Growth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusion.

Authors:  Ruifan Tang; Kai Huang; Hongkai Lai; Cheng Li; Zhiming Wu; Junyong Kang
Journal:  Nanoscale Res Lett       Date:  2012-06-26       Impact factor: 4.703

3.  Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility.

Authors:  Vladimir A Yuryev; Larisa V Arapkina
Journal:  Nanoscale Res Lett       Date:  2011-09-05       Impact factor: 4.703

4.  Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands.

Authors:  Samaresh Das; Kaustuv Das; Raj Kumar Singha; Santanu Manna; Achintya Dhar; Samit Kumar Ray; Arup Kumar Raychaudhuri
Journal:  Nanoscale Res Lett       Date:  2011-06-09       Impact factor: 4.703

5.  Grazing-incidence small-angle X-ray scattering: application to the study of quantum dot lattices.

Authors:  Maja Buljan; Nikola Radić; Sigrid Bernstorff; Goran Dražić; Iva Bogdanović-Radović; Václav Holý
Journal:  Acta Crystallogr A       Date:  2011-11-11       Impact factor: 2.290

6.  Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar Arrays.

Authors:  Yuwen Jiang; Shufan Huang; Zhichao Zhu; Cheng Zeng; Yongliang Fan; Zuimin Jiang
Journal:  Nanoscale Res Lett       Date:  2016-02-24       Impact factor: 4.703

Review 7.  Germanium epitaxy on silicon.

Authors:  Hui Ye; Jinzhong Yu
Journal:  Sci Technol Adv Mater       Date:  2014-03-18       Impact factor: 8.090

8.  Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning.

Authors:  See Wee Chee; Martin Kammler; Jeremy Graham; Lynne Gignac; Mark C Reuter; Robert Hull; Frances M Ross
Journal:  Sci Rep       Date:  2018-06-19       Impact factor: 4.379

  8 in total

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