Literature DB >> 17843189

Germanium and Silicon Disulfides: Structure and Synthesis.

C T Prewitt, H S Young.   

Abstract

Crystal structures of the tetragonal forms of germanium and silicon disulfide are similar and consist of (SiS(4))(4-) and (GeS(4))(4-) tetrahedra which share vertices to form three-dimensional networks. These tetragonal materials, synthesized at high pressure and temperature, are different from the previously known germanium and silicon disulfides.

Entities:  

Year:  1965        PMID: 17843189     DOI: 10.1126/science.149.3683.535

Source DB:  PubMed          Journal:  Science        ISSN: 0036-8075            Impact factor:   47.728


  2 in total

1.  Creating new layered structures at high pressures: SiS2.

Authors:  Dušan Plašienka; Roman Martoňák; Erio Tosatti
Journal:  Sci Rep       Date:  2016-11-25       Impact factor: 4.379

2.  Synthesis and Growth Mechanism of SiS2 Rods.

Authors:  Meng-Xiang Xie; Ji-Wei Zhang; Yong Zhang; Hou-Ran Wu; Yan-Pei Wang; Wen-Hao Wang; Gang-Qin Shao
Journal:  ACS Omega       Date:  2022-06-23
  2 in total

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