Literature DB >> 17840057

High-luminosity blue and blue-green gallium nitride light-emitting diodes.

H Morkoç, S N Mohammad.   

Abstract

Compact and efficient sources of blue light for full color display applications and lighting eluded and tantalized researchers for many years. Semiconductor light sources are attractive owing to their reliability and amenability to mass manufacture. However, large band gaps are required to achieve blue color. A class of compound semiconductors formed by metal nitrides, GaN and its allied compounds AIGaN and InGaN, exhibits properties well suited for not only blue and blue-green emitters, but also for ultraviolet emitters and detectors. What thwarted engineers and scientists from fabricating useful devices from these materials in the past was the poor quality of material and lack of p-type doping. Both of these obstacles have recently been overcome to the point where highluminosity blue and blue-green light-emitting diodes are now available in the marketplace.

Entities:  

Year:  1995        PMID: 17840057     DOI: 10.1126/science.267.5194.51

Source DB:  PubMed          Journal:  Science        ISSN: 0036-8075            Impact factor:   47.728


  9 in total

1.  Lateral heterojunctions within monolayer MoSe2-WSe2 semiconductors.

Authors:  Chunming Huang; Sanfeng Wu; Ana M Sanchez; Jonathan J P Peters; Richard Beanland; Jason S Ross; Pasqual Rivera; Wang Yao; David H Cobden; Xiaodong Xu
Journal:  Nat Mater       Date:  2014-08-24       Impact factor: 43.841

2.  Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: augmented light output of GaN UV-LED.

Authors:  Hyun Jeong; Seung Yol Jeong; Doo Jae Park; Hyeon Jun Jeong; Sooyeon Jeong; Joong Tark Han; Hee Jin Jeong; Sunhye Yang; Ho Young Kim; Kang-Jun Baeg; Sae June Park; Yeong Hwan Ahn; Eun-Kyung Suh; Geon-Woong Lee; Young Hee Lee; Mun Seok Jeong
Journal:  Sci Rep       Date:  2015-01-14       Impact factor: 4.379

3.  Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes.

Authors:  Hyun Jeong; Hyeon Jun Jeong; Hye Min Oh; Chang-Hee Hong; Eun-Kyung Suh; Gilles Lerondel; Mun Seok Jeong
Journal:  Sci Rep       Date:  2015-03-20       Impact factor: 4.379

4.  Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy.

Authors:  Xufan Li; Ming-Wei Lin; Junhao Lin; Bing Huang; Alexander A Puretzky; Cheng Ma; Kai Wang; Wu Zhou; Sokrates T Pantelides; Miaofang Chi; Ivan Kravchenko; Jason Fowlkes; Christopher M Rouleau; David B Geohegan; Kai Xiao
Journal:  Sci Adv       Date:  2016-04-15       Impact factor: 14.136

5.  Thermal Plasma Synthesis of Crystalline Gallium Nitride Nanopowder from Gallium Nitrate Hydrate and Melamine.

Authors:  Tae-Hee Kim; Sooseok Choi; Dong-Wha Park
Journal:  Nanomaterials (Basel)       Date:  2016-02-24       Impact factor: 5.076

6.  Fabrication and characteristics of ZnO/OAD-InN/PbPc hybrid solar cells prepared by oblique-angle deposition.

Authors:  Cheng-Chiang Chen; Lung-Chien Chen
Journal:  Molecules       Date:  2012-08-08       Impact factor: 4.411

7.  Band engineering of Dirac materials in Sb m Bi n lateral heterostructures.

Authors:  Yonghui Liu
Journal:  RSC Adv       Date:  2021-05-13       Impact factor: 4.036

8.  Modulating the thermal and structural stability of gallenene via variation of atomistic thickness.

Authors:  Stephanie Lambie; Krista G Steenbergen; Nicola Gaston
Journal:  Nanoscale Adv       Date:  2020-12-23

9.  Blue organic light-emitting supramolecular microfibers: the self-assembly of a 1,2,4-triazolo[1,5-a]pyrimidine derivative.

Authors:  Zu-Ming Liu; Hong-Bo Wang; Xiao-Lei Zhu; Hai-Yang Tu; Guang-Fu Yang
Journal:  Molecules       Date:  2008-04-12       Impact factor: 4.411

  9 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.