Negative differential resistance and switching behavior of redox-mediated tunnel contact.

Theoretical description of various properties of redox-mediated tunnel contacts is presented. The dependences of the current on the overpotential and bias voltage under the sweeping voltammetry conditions are addressed. The effect of switching between two redox states on the shape of current/voltage characteristics is discussed. The shot noise and telegraph noise of the bridged contacts involving redox group are considered. Functional properties of the contact as a means for the information processing are discussed.