Literature DB >> 17678177

Enhanced magnetotransport at high bias in quasimagnetic tunnel junctions with EuS spin-filter barriers.

T Nagahama1, T S Santos, J S Moodera.   

Abstract

In quasimagnetic tunnel junctions with a EuS spin-filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is contrary to conventional magnetic tunnel junctions. This behavior can be understood as due to Fowler-Nordheim tunneling through the fully spin-polarized EuS conduction band. The I-V characteristics and bias dependence of MR calculated using tunneling theory show excellent agreement with experiment.

Entities:  

Year:  2007        PMID: 17678177     DOI: 10.1103/PhysRevLett.99.016602

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Spin polarization in half-metals probed by femtosecond spin excitation.

Authors:  Georg M Müller; Jakob Walowski; Marija Djordjevic; Gou-Xing Miao; Arunava Gupta; Ana V Ramos; Kai Gehrke; Vasily Moshnyaga; Konrad Samwer; Jan Schmalhorst; Andy Thomas; Andreas Hütten; Günter Reiss; Jagadeesh S Moodera; Markus Münzenberg
Journal:  Nat Mater       Date:  2008-12-14       Impact factor: 43.841

2.  Dual Control of Giant Field-like Spin Torque in Spin Filter Tunnel Junctions.

Authors:  Y-H Tang; F-C Chu; Nicholas Kioussis
Journal:  Sci Rep       Date:  2015-06-22       Impact factor: 4.379

3.  Boron nitride nanotubes for spintronics.

Authors:  Kamal B Dhungana; Ranjit Pati
Journal:  Sensors (Basel)       Date:  2014-09-22       Impact factor: 3.576

4.  Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element.

Authors:  L Lόpez-Mir; C Frontera; H Aramberri; K Bouzehouane; J Cisneros-Fernández; B Bozzo; L Balcells; B Martínez
Journal:  Sci Rep       Date:  2018-01-16       Impact factor: 4.379

  4 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.