Literature DB >> 17632544

Electronic spin transport and spin precession in single graphene layers at room temperature.

Nikolaos Tombros1, Csaba Jozsa, Mihaita Popinciuc, Harry T Jonkman, Bart J van Wees.   

Abstract

Electronic transport in single or a few layers of graphene is the subject of intense interest at present. The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states, has led to the observation of new electronic transport phenomena such as anomalously quantized Hall effects, absence of weak localization and the existence of a minimum conductivity. In addition to dissipative transport, supercurrent transport has also been observed. Graphene might also be a promising material for spintronics and related applications, such as the realization of spin qubits, owing to the low intrinsic spin orbit interaction, as well as the low hyperfine interaction of the electron spins with the carbon nuclei. Here we report the observation of spin transport, as well as Larmor spin precession, over micrometre-scale distances in single graphene layers. The 'non-local' spin valve geometry was used in these experiments, employing four-terminal contact geometries with ferromagnetic cobalt electrodes making contact with the graphene sheet through a thin oxide layer. We observe clear bipolar (changing from positive to negative sign) spin signals that reflect the magnetization direction of all four electrodes, indicating that spin coherence extends underneath all of the contacts. No significant changes in the spin signals occur between 4.2 K, 77 K and room temperature. We extract a spin relaxation length between 1.5 and 2 mum at room temperature, only weakly dependent on charge density. The spin polarization of the ferromagnetic contacts is calculated from the measurements to be around ten per cent.

Entities:  

Year:  2007        PMID: 17632544     DOI: 10.1038/nature06037

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  109 in total

1.  Spintronics and pseudospintronics in graphene and topological insulators.

Authors:  Dmytro Pesin; Allan H MacDonald
Journal:  Nat Mater       Date:  2012-04-23       Impact factor: 43.841

2.  Extremely long quasiparticle spin lifetimes in superconducting aluminium using MgO tunnel spin injectors.

Authors:  Hyunsoo Yang; See-Hun Yang; Saburo Takahashi; Sadamichi Maekawa; Stuart S P Parkin
Journal:  Nat Mater       Date:  2010-06-06       Impact factor: 43.841

3.  A spin of their own.

Authors:  Greg Szulczewski; Stefano Sanvito; Michael Coey
Journal:  Nat Mater       Date:  2009-09       Impact factor: 43.841

4.  Electrically tunable spin injector free from the impedance mismatch problem.

Authors:  K Ando; S Takahashi; J Ieda; H Kurebayashi; T Trypiniotis; C H W Barnes; S Maekawa; E Saitoh
Journal:  Nat Mater       Date:  2011-06-26       Impact factor: 43.841

5.  Organic semiconductors: What makes the spin relax?

Authors:  Peter A Bobbert
Journal:  Nat Mater       Date:  2010-02-14       Impact factor: 43.841

6.  Proposal for an all-spin logic device with built-in memory.

Authors:  Behtash Behin-Aein; Deepanjan Datta; Sayeef Salahuddin; Supriyo Datta
Journal:  Nat Nanotechnol       Date:  2010-02-28       Impact factor: 39.213

Review 7.  Nanoelectromechanical device fabrications by 3-D nanotechnology using focused-ion beams.

Authors:  Reo Kometani; Sunao Ishihara
Journal:  Sci Technol Adv Mater       Date:  2009-07-14       Impact factor: 8.090

8.  Oscillatory spin-polarized tunnelling from silicon quantum wells controlled by electric field.

Authors:  Ron Jansen; Byoung-Chul Min; Saroj P Dash
Journal:  Nat Mater       Date:  2009-12-13       Impact factor: 43.841

9.  A Study on Field Emission Characteristics of Planar Graphene Layers Obtained from a Highly Oriented Pyrolyzed Graphite Block.

Authors:  Seok Woo Lee; Seung S Lee; Eui-Hyeok Yang
Journal:  Nanoscale Res Lett       Date:  2009-07-12       Impact factor: 4.703

10.  Layer-by-layer assembly of vertically conducting graphene devices.

Authors:  Jing-Jing Chen; Jie Meng; Yang-Bo Zhou; Han-Chun Wu; Ya-Qing Bie; Zhi-Min Liao; Da-Peng Yu
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

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