Literature DB >> 17538616

Spin-based logic in semiconductors for reconfigurable large-scale circuits.

H Dery1, P Dalal, Ł Cywiński, L J Sham.   

Abstract

Research in semiconductor spintronics aims to extend the scope of conventional electronics by using the spin degree of freedom of an electron in addition to its charge. Significant scientific advances in this area have been reported, such as the development of diluted ferromagnetic semiconductors, spin injection into semiconductors from ferromagnetic metals and discoveries of new physical phenomena involving electron spin. Yet no viable means of developing spintronics in semiconductors has been presented. Here we report a theoretical design that is a conceptual step forward-spin accumulation is used as the basis of a semiconductor computer circuit. Although the giant magnetoresistance effect in metals has already been commercially exploited, it does not extend to semiconductor/ferromagnet systems, because the effect is too weak for logic operations. We overcome this obstacle by using spin accumulation rather than spin flow. The basic element in our design is a logic gate that consists of a semiconductor structure with multiple magnetic contacts; this serves to perform fast and reprogrammable logic operations in a noisy, room-temperature environment. We then introduce a method to interconnect a large number of these gates to form a 'spin computer'. As the shrinking of conventional complementary metal-oxide-semiconductor (CMOS) transistors reaches its intrinsic limit, greater computational capability will mean an increase in both circuit area and power dissipation. Our spin-based approach may provide wide margins for further scaling and also greater computational capability per gate.

Entities:  

Year:  2007        PMID: 17538616     DOI: 10.1038/nature05833

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  38 in total

1.  New moves of the spintronics tango.

Authors:  Jairo Sinova; Igor Žutić
Journal:  Nat Mater       Date:  2012-04-23       Impact factor: 43.841

2.  'Memristive' switches enable 'stateful' logic operations via material implication.

Authors:  Julien Borghetti; Gregory S Snider; Philip J Kuekes; J Joshua Yang; Duncan R Stewart; R Stanley Williams
Journal:  Nature       Date:  2010-04-08       Impact factor: 49.962

3.  Robust isothermal electric control of exchange bias at room temperature.

Authors:  Xi He; Yi Wang; Ning Wu; Anthony N Caruso; Elio Vescovo; Kirill D Belashchenko; Peter A Dowben; Christian Binek
Journal:  Nat Mater       Date:  2010-06-20       Impact factor: 43.841

4.  Multistability of a coherent spin ensemble in a semiconductor microcavity.

Authors:  T K Paraïso; M Wouters; Y Léger; F Morier-Genoud; B Deveaud-Plédran
Journal:  Nat Mater       Date:  2010-07-04       Impact factor: 43.841

5.  Exchange bias of the interface spin system at the Fe/MgO interface.

Authors:  Y Fan; K J Smith; G Lüpke; A T Hanbicki; R Goswami; C H Li; H B Zhao; B T Jonker
Journal:  Nat Nanotechnol       Date:  2013-06-02       Impact factor: 39.213

6.  Spintronics: Shedding light on nanomagnets.

Authors:  Igor Zutić; Andre Petukhov
Journal:  Nat Nanotechnol       Date:  2009-10       Impact factor: 39.213

7.  Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts.

Authors:  C H Li; O M J van 't Erve; B T Jonker
Journal:  Nat Commun       Date:  2011       Impact factor: 14.919

8.  Proposal for an all-spin logic device with built-in memory.

Authors:  Behtash Behin-Aein; Deepanjan Datta; Sayeef Salahuddin; Supriyo Datta
Journal:  Nat Nanotechnol       Date:  2010-02-28       Impact factor: 39.213

9.  Spintronics: Taming spin currents.

Authors:  Igor Žutić; Hanan Dery
Journal:  Nat Mater       Date:  2011-08-23       Impact factor: 43.841

10.  Oscillatory spin-polarized tunnelling from silicon quantum wells controlled by electric field.

Authors:  Ron Jansen; Byoung-Chul Min; Saroj P Dash
Journal:  Nat Mater       Date:  2009-12-13       Impact factor: 43.841

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