Literature DB >> 17501295

Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides.

Y B Nian1, J Strozier, N J Wu, X Chen, A Ignatiev.   

Abstract

Electric-pulse induced resistance hysteresis switching loops for Pr0.7Ca0.3MnO3 perovskite oxide films were found to exhibit an additional sharp "shuttle tail" peak around the negative pulse maximum for films deposited in an oxygen-deficient ambient. The resistance relaxation in time of this "shuttle tail" peak as well as resistance relaxation in the transition regions of the resistance hysteresis loop show evidence of oxygen diffusion under electric pulsing, and support a proposed oxygen diffusion model with oxygen vacancy pileup at the metal electrode interface region as the active process for the nonvolatile resistance switching effect in transition-metal oxides.

Entities:  

Year:  2007        PMID: 17501295     DOI: 10.1103/PhysRevLett.98.146403

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  19 in total

1.  Memristive devices for computing.

Authors:  J Joshua Yang; Dmitri B Strukov; Duncan R Stewart
Journal:  Nat Nanotechnol       Date:  2013-01       Impact factor: 39.213

2.  Imaging oxygen defects and their motion at a manganite surface.

Authors:  B Bryant; Ch Renner; Y Tokunaga; Y Tokura; G Aeppli
Journal:  Nat Commun       Date:  2011       Impact factor: 14.919

3.  Thin film deposition of metal oxides in resistance switching devices: electrode material dependence of resistance switching in manganite films.

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Journal:  Nanoscale Res Lett       Date:  2013-02-15       Impact factor: 4.703

4.  Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM.

Authors:  Shibing Long; Luca Perniola; Carlo Cagli; Julien Buckley; Xiaojuan Lian; Enrique Miranda; Feng Pan; Ming Liu; Jordi Suñé
Journal:  Sci Rep       Date:  2013-10-14       Impact factor: 4.379

5.  Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.

Authors:  Hai Yang Peng; Yong Feng Li; Wei Nan Lin; Yu Zhan Wang; Xing Yu Gao; Tom Wu
Journal:  Sci Rep       Date:  2012-06-07       Impact factor: 4.379

6.  Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier.

Authors:  Qiang Li; Ting-Ting Shen; Yan-Ling Cao; Kun Zhang; Shi-Shen Yan; Yu-Feng Tian; Shi-Shou Kang; Ming-Wen Zhao; You-Yong Dai; Yan-Xue Chen; Guo-Lei Liu; Liang-Mo Mei; Xiao-Lin Wang; Peter Grünberg
Journal:  Sci Rep       Date:  2014-01-23       Impact factor: 4.379

7.  Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration.

Authors:  Xiongwu He; Yanling Yin; Jie Guo; Huajun Yuan; Yuehua Peng; Yong Zhou; Ding Zhao; Kuo Hai; Weichang Zhou; Dongsheng Tang
Journal:  Nanoscale Res Lett       Date:  2013-01-24       Impact factor: 4.703

8.  STDP and STDP variations with memristors for spiking neuromorphic learning systems.

Authors:  T Serrano-Gotarredona; T Masquelier; T Prodromakis; G Indiveri; B Linares-Barranco
Journal:  Front Neurosci       Date:  2013-02-18       Impact factor: 4.677

9.  Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis.

Authors:  Adnan Younis; Dewei Chu; Sean Li
Journal:  Sci Rep       Date:  2015-09-01       Impact factor: 4.379

10.  Electric field modification of magnetism in Au/La2/3Ba1/3MnO3/Pt device.

Authors:  Y Q Xiong; W P Zhou; Q Li; Q Q Cao; T Tang; D H Wang; Y W Du
Journal:  Sci Rep       Date:  2015-08-04       Impact factor: 4.379

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