Literature DB >> 17501133

Carrier-density-dependent lattice stability in InSb.

P B Hillyard1, K J Gaffney, A M Lindenberg, S Engemann, R A Akre, J Arthur, C Blome, P H Bucksbaum, A L Cavalieri, A Deb, R W Falcone, D M Fritz, P H Fuoss, J Hajdu, P Krejcik, J Larsson, S H Lee, D A Meyer, A J Nelson, R Pahl, D A Reis, J Rudati, D P Siddons, K Sokolowski-Tinten, D von der Linde, J B Hastings.   

Abstract

The ultrafast decay of the x-ray diffraction intensity following laser excitation of an InSb crystal has been utilized to observe carrier dependent changes in the potential energy surface. For the first time, an abrupt carrier dependent onset for potential energy surface softening and the appearance of accelerated atomic disordering for a very high average carrier density have been observed. Inertial dynamics dominate the early stages of crystal disordering for a wide range of carrier densities between the onset of crystal softening and the appearance of accelerated atomic disordering.

Year:  2007        PMID: 17501133     DOI: 10.1103/PhysRevLett.98.125501

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Electronic acceleration of atomic motions and disordering in bismuth.

Authors:  Germán Sciaini; Maher Harb; Sergei G Kruglik; Thomas Payer; Christoph T Hebeisen; Frank-J Meyer zu Heringdorf; Mariko Yamaguchi; Michael Horn-von Hoegen; Ralph Ernstorfer; R J Dwayne Miller
Journal:  Nature       Date:  2009-03-05       Impact factor: 49.962

  1 in total

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