| Literature DB >> 17429814 |
M Kittler1, X Yu, T Mchedlidze, T Arguirov, O F Vyvenko, W Seifert, M Reiche, T Wilhelm, M Seibt, O Voss, A Wolff, W Fritzsche.
Abstract
Well-controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation-network-based light emitters, manipulators of biomolecules, gettering and insulating layers, and three-dimensional buried conductive channels are presented and discussed. A prototype of a Si-based light emitter working at a wavelength of about 1.5 microm with an efficiency potential estimated at 1% is demonstrated.Entities:
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Year: 2007 PMID: 17429814 DOI: 10.1002/smll.200600539
Source DB: PubMed Journal: Small ISSN: 1613-6810 Impact factor: 13.281