Literature DB >> 17429814

Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics.

M Kittler1, X Yu, T Mchedlidze, T Arguirov, O F Vyvenko, W Seifert, M Reiche, T Wilhelm, M Seibt, O Voss, A Wolff, W Fritzsche.   

Abstract

Well-controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation-network-based light emitters, manipulators of biomolecules, gettering and insulating layers, and three-dimensional buried conductive channels are presented and discussed. A prototype of a Si-based light emitter working at a wavelength of about 1.5 microm with an efficiency potential estimated at 1% is demonstrated.

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Year:  2007        PMID: 17429814     DOI: 10.1002/smll.200600539

Source DB:  PubMed          Journal:  Small        ISSN: 1613-6810            Impact factor:   13.281


  1 in total

1.  Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope.

Authors:  Ellen Hieckmann; Markus Nacke; Matthias Allardt; Yury Bodrov; Paul Chekhonin; Werner Skrotzki; Jörg Weber
Journal:  J Vis Exp       Date:  2016-05-28       Impact factor: 1.355

  1 in total

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