Implementation of diffractive optical element in four-wave mixing scheme for ex situ characterization of hydride vapor phase epitaxy-grown GaN layers.

A holographic beam splitter has been integrated into a picosecond four-wave mixing (FWM) scheme. This modification significantly simplified the procedure of dynamic grating recording, thus making the FWM technique an easy-to-use tool for the holographic characterization of wide band gap materials. The novel FWM scheme was applied for characterization of hydride vapor phase epitaxy-grown undoped GaN layers of different thickness. It allowed the determination of carrier lifetime, diffusion coefficient, and carrier diffusion length by optical means, as well as the study of carrier recombination peculiarities with respect to dislocation and excess carrier density.