Literature DB >> 17358874

Unique melting behavior in phase-change materials for rewritable data storage.

Zhimei Sun1, Jian Zhou, Rajeev Ahuja.   

Abstract

Ge2Sb2Te5 (GST) is a technologically very important phase-change material for rewritable optical and electrical storage because it can be switched rapidly back and forth between amorphous and crystalline states for millions of cycles by appropriate pulsed heating. However, an understanding of this complicated phenomenon has not yet been achieved. Here, by ab initio molecular dynamics, we unravel the reversible phase transition process of GST. The melting of rocksalt-structured GST is unique in that it forms two-dimensional linear or tangled clusters while keeping order in the perpendicular direction. It is this specific character that results in the fast and reversible phase transition between amorphous and crystalline and hence rewritable data storage.

Year:  2007        PMID: 17358874     DOI: 10.1103/PhysRevLett.98.055505

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  5 in total

1.  Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge₂Sb₂Te₅ phase-change memory material.

Authors:  Zhimei Sun; Jian Zhou; Yuanchun Pan; Zhitang Song; Ho-Kwang Mao; Rajeev Ahuja
Journal:  Proc Natl Acad Sci U S A       Date:  2011-06-13       Impact factor: 11.205

2.  Ultrafast phase-change logic device driven by melting processes.

Authors:  Desmond Loke; Jonathan M Skelton; Wei-Jie Wang; Tae-Hoon Lee; Rong Zhao; Tow-Chong Chong; Stephen R Elliott
Journal:  Proc Natl Acad Sci U S A       Date:  2014-09-02       Impact factor: 11.205

Review 3.  A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials.

Authors:  Jiang-Jing Wang; Ya-Zhi Xu; Riccardo Mazzarello; Matthias Wuttig; Wei Zhang
Journal:  Materials (Basel)       Date:  2017-07-27       Impact factor: 3.623

4.  Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe.

Authors:  Bin Zhang; Xue-Peng Wang; Zhen-Ju Shen; Xian-Bin Li; Chuan-Shou Wang; Yong-Jin Chen; Ji-Xue Li; Jin-Xing Zhang; Ze Zhang; Sheng-Bai Zhang; Xiao-Dong Han
Journal:  Sci Rep       Date:  2016-05-03       Impact factor: 4.379

5.  A highly parallel strategy for storage of digital information in living cells.

Authors:  Azat Akhmetov; Andrew D Ellington; Edward M Marcotte
Journal:  BMC Biotechnol       Date:  2018-10-17       Impact factor: 2.563

  5 in total

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