Literature DB >> 17358800

Observation of a superconducting gap in boron-doped diamond by laser-excited photoemission spectroscopy.

K Ishizaka1, R Eguchi, S Tsuda, T Yokoya, A Chainani, T Kiss, T Shimojima, T Togashi, S Watanabe, C-T Chen, C Q Zhang, Y Takano, M Nagao, I Sakaguchi, T Takenouchi, H Kawarada, S Shin.   

Abstract

We investigate the temperature (T)-dependent low-energy electronic structure of a boron-doped diamond thin film using ultrahigh resolution laser-excited photoemission spectroscopy. We observe a clear shift of the leading edge below T=11 K, indicative of a superconducting gap opening (Delta approximately 0.78 meV at T=4.5 K). The gap feature is significantly broad and a well-defined quasiparticle peak is lacking even at the lowest temperature of measurement (=4.5 K). We discuss our results in terms of disorder effects on the normal state transport and superconductivity in this system.

Entities:  

Year:  2007        PMID: 17358800     DOI: 10.1103/PhysRevLett.98.047003

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Superconducting group-IV semiconductors.

Authors:  Xavier Blase; Etienne Bustarret; Claude Chapelier; Thierry Klein; Christophe Marcenat
Journal:  Nat Mater       Date:  2009-05       Impact factor: 43.841

2.  Superconductivity in compensated and uncompensated semiconductors.

Authors:  Youichi Yanase; Naoyuki Yorozu
Journal:  Sci Technol Adv Mater       Date:  2009-01-28       Impact factor: 8.090

  2 in total

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