Literature DB >> 17358715

Fine structure of negatively and positively charged excitons in semiconductor quantum dots: electron-hole asymmetry.

M Ediger1, G Bester, B D Gerardot, A Badolato, P M Petroff, K Karrai, A Zunger, R J Warburton.   

Abstract

We present new understanding of excitonic fine structure in close-to-symmetric InAs/GaAs and InGaAs/GaAs quantum dots. We demonstrate excellent agreement between spectroscopy and many-body pseudopotential theory in the energy splittings, selection rules and polarizations of the optical emissions from doubly charged excitons. We discover a marked difference between the fine structure of the doubly negatively and doubly positively charged excitons. The features in the doubly charged emission spectra are shown to arise mainly from the lack of inversion symmetry in the underlying crystal lattice.

Entities:  

Year:  2007        PMID: 17358715     DOI: 10.1103/PhysRevLett.98.036808

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  All-Optical Fiber Hanbury Brown &Twiss Interferometer to study 1300 nm single photon emission of a metamorphic InAs Quantum Dot.

Authors:  G Muñoz-Matutano; D Barrera; C R Fernández-Pousa; R Chulia-Jordan; L Seravalli; G Trevisi; P Frigeri; S Sales; J Martínez-Pastor
Journal:  Sci Rep       Date:  2016-06-03       Impact factor: 4.379

  1 in total

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