Literature DB >> 17351613

Data storage. Multiferroic memories.

J F Scott.   

Abstract

Entities:  

Year:  2007        PMID： 17351613     DOI： 10.1038/nmat1868

Source DB:  PubMed          Journal:  Nat Mater        ISSN： 1476-1122            Impact factor:   43.841


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  38 in total

Review 1.  Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications.

Authors:  Ying Wang; Weijin Chen; Biao Wang; Yue Zheng
Journal:  Materials (Basel)       Date:  2014-09-11       Impact factor: 3.623

2.  Reversible electrical switching of spin polarization in multiferroic tunnel junctions.

Authors:  D Pantel; S Goetze; D Hesse; M Alexe
Journal:  Nat Mater       Date:  2012-02-26       Impact factor: 43.841

3.  Voltage control of magnetism in multiferroic heterostructures.

Authors:  Ming Liu; Nian X Sun
Journal:  Philos Trans A Math Phys Eng Sci       Date:  2014-01-13       Impact factor: 4.226

4.  Designing switchable polarization and magnetization at room temperature in an oxide.

Authors:  P Mandal; M J Pitcher; J Alaria; H Niu; P Borisov; P Stamenov; J B Claridge; M J Rosseinsky
Journal:  Nature       Date:  2015-09-17       Impact factor: 49.962

5.  Ferroelectric phase transition in multiferroic Ge1-x Mn x Te driven by local lattice distortions.

Authors:  Dominik Kriegner; Jürgen Furthmüller; Raimund Kirchschlager; Jan Endres; Lukas Horak; Petr Cejpek; Helena Reichlova; Xavier Marti; Daniel Primetzhofer; Andreas Ney; Günther Bauer; Friedhelm Bechstedt; Vaclav Holy; Gunther Springholz
Journal:  Phys Rev B       Date:  2016-08-19       Impact factor: 4.036

6.  Charged Domain Wall and Polar Vortex Topologies in a Room-Temperature Magnetoelectric Multiferroic Thin Film.

Authors:  Kalani Moore; Eoghan N O'Connell; Sinéad M Griffin; Clive Downing; Louise Colfer; Michael Schmidt; Valeria Nicolosi; Ursel Bangert; Lynette Keeney; Michele Conroy
Journal:  ACS Appl Mater Interfaces       Date:  2022-01-19       Impact factor: 9.229

7.  Physical and chemical mechanisms in oxide-based resistance random access memory.

Authors:  Kuan-Chang Chang; Ting-Chang Chang; Tsung-Ming Tsai; Rui Zhang; Ya-Chi Hung; Yong-En Syu; Yao-Feng Chang; Min-Chen Chen; Tian-Jian Chu; Hsin-Lu Chen; Chih-Hung Pan; Chih-Cheng Shih; Jin-Cheng Zheng; Simon M Sze
Journal:  Nanoscale Res Lett       Date:  2015-03-12       Impact factor: 4.703

8.  Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier.

Authors:  Qiang Li; Ting-Ting Shen; Yan-Ling Cao; Kun Zhang; Shi-Shen Yan; Yu-Feng Tian; Shi-Shou Kang; Ming-Wen Zhao; You-Yong Dai; Yan-Xue Chen; Guo-Lei Liu; Liang-Mo Mei; Xiao-Lin Wang; Peter Grünberg
Journal:  Sci Rep       Date:  2014-01-23       Impact factor: 4.379

9.  Coexistence of magnetic and electric orderings in a divalent Cr2+-based multiaxial molecular ferroelectric.

Authors:  Yong Ai; Rong Sun; Yu-Ling Zeng; Jun-Chao Liu; Yuan-Yuan Tang; Bing-Wu Wang; Zhe-Ming Wang; Song Gao; Ren-Gen Xiong
Journal:  Chem Sci       Date:  2021-06-15       Impact factor: 9.825

10.  Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates.

Authors:  Xu Xue; Ziyao Zhou; Bin Peng; Mingmin Zhu; Yijun Zhang; Wei Ren; Tao Ren; Xi Yang; Tianxiang Nan; Nian X Sun; Ming Liu
Journal:  Sci Rep       Date:  2015-11-18       Impact factor: 4.379
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