Literature DB >> 17301788

Ultralow-power organic complementary circuits.

Hagen Klauk1, Ute Zschieschang, Jens Pflaum, Marcus Halik.   

Abstract

The prospect of using low-temperature processable organic semiconductors to implement transistors, circuits, displays and sensors on arbitrary substrates, such as glass or plastics, offers enormous potential for a wide range of electronic products. Of particular interest are portable devices that can be powered by small batteries or by near-field radio-frequency coupling. The main problem with existing approaches is the large power consumption of conventional organic circuits, which makes battery-powered applications problematic, if not impossible. Here we demonstrate an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc). The monolayer dielectric is grown on patterned metal gates at room temperature and is optimized to provide a large gate capacitance and low gate leakage currents. By combining low-voltage p-channel and n-channel organic thin-film transistors in a complementary circuit design, the static currents are reduced to below 100 pA per logic gate. We have fabricated complementary inverters, NAND gates, and ring oscillators that operate with supply voltages between 1.5 and 3 V and have a static power consumption of less than 1 nW per logic gate. These organic circuits are thus well suited for battery-powered systems such as portable display devices and large-surface sensor networks as well as for radio-frequency identification tags with extended operating range.

Entities:  

Year:  2007        PMID: 17301788     DOI: 10.1038/nature05533

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  72 in total

1.  Flexible molecular-scale electronic devices.

Authors:  Sungjun Park; Gunuk Wang; Byungjin Cho; Yonghun Kim; Sunghoon Song; Yongsung Ji; Myung-Han Yoon; Takhee Lee
Journal:  Nat Nanotechnol       Date:  2012-06-03       Impact factor: 39.213

2.  Flexible organic transistors and circuits with extreme bending stability.

Authors:  Tsuyoshi Sekitani; Ute Zschieschang; Hagen Klauk; Takao Someya
Journal:  Nat Mater       Date:  2010-11-07       Impact factor: 43.841

3.  Ultraflexible, large-area, physiological temperature sensors for multipoint measurements.

Authors:  Tomoyuki Yokota; Yusuke Inoue; Yuki Terakawa; Jonathan Reeder; Martin Kaltenbrunner; Taylor Ware; Kejia Yang; Kunihiko Mabuchi; Tomohiro Murakawa; Masaki Sekino; Walter Voit; Tsuyoshi Sekitani; Takao Someya
Journal:  Proc Natl Acad Sci U S A       Date:  2015-11-09       Impact factor: 11.205

4.  Stretchable active-matrix organic light-emitting diode display using printable elastic conductors.

Authors:  Tsuyoshi Sekitani; Hiroyoshi Nakajima; Hiroki Maeda; Takanori Fukushima; Takuzo Aida; Kenji Hata; Takao Someya
Journal:  Nat Mater       Date:  2009-06       Impact factor: 43.841

5.  Solid-state physics: Electrons in the fast lane.

Authors:  Henning Sirringhaus
Journal:  Nature       Date:  2009-02-05       Impact factor: 49.962

6.  Solution-processed, high-performance n-channel organic microwire transistors.

Authors:  Joon Hak Oh; Hang Woo Lee; Stefan Mannsfeld; Randall M Stoltenberg; Eric Jung; Yong Wan Jin; Jong Min Kim; Ji-Beom Yoo; Zhenan Bao
Journal:  Proc Natl Acad Sci U S A       Date:  2009-03-19       Impact factor: 11.205

7.  Organic transistors manufactured using inkjet technology with subfemtoliter accuracy.

Authors:  Tsuyoshi Sekitani; Yoshiaki Noguchi; Ute Zschieschang; Hagen Klauk; Takao Someya
Journal:  Proc Natl Acad Sci U S A       Date:  2008-03-24       Impact factor: 11.205

8.  Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT.

Authors:  Steve Park; Gaurav Giri; Leo Shaw; Gregory Pitner; Jewook Ha; Ja Hoon Koo; Xiaodan Gu; Joonsuk Park; Tae Hoon Lee; Ji Hyun Nam; Yongtaek Hong; Zhenan Bao
Journal:  Proc Natl Acad Sci U S A       Date:  2015-04-20       Impact factor: 11.205

9.  Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors.

Authors:  Bhola N Pal; Bal Mukund Dhar; Kevin C See; Howard E Katz
Journal:  Nat Mater       Date:  2009-10-18       Impact factor: 43.841

10.  Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors.

Authors:  Guanghao Lu; James Blakesley; Scott Himmelberger; Patrick Pingel; Johannes Frisch; Ingo Lieberwirth; Ingo Salzmann; Martin Oehzelt; Riccardo Di Pietro; Alberto Salleo; Norbert Koch; Dieter Neher
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

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