Literature DB >> 17249859

Migration of holes: numerical algorithms and implementation.

J Breidbach1, L S Cederbaum.   

Abstract

A hole created in a system, for instance by ionization, can migrate through the system solely driven by many-electron effects. The implementation of the theory of charge migration and the numerical algorithms used are described in detail. A description of the ab initio calculation of charge migration in realistic systems is presented for several examples and the underlying mechanisms of charge migration are identified and interpreted using theoretical models. In all cases studied the migration is found to be ultrafast.

Year:  2007        PMID: 17249859     DOI: 10.1063/1.2428292

Source DB:  PubMed          Journal:  J Chem Phys        ISSN: 0021-9606            Impact factor:   3.488


  2 in total

1.  Simulation and visualization of attosecond stimulated x-ray Raman spectroscopy signals in trans-N-methylacetamide at the nitrogen and oxygen K-edges.

Authors:  Daniel Healion; Haitao Wang; Shaul Mukamel
Journal:  J Chem Phys       Date:  2011-03-28       Impact factor: 3.488

2.  Entangled Valence Electron-Hole Dynamics Revealed by Stimulated Attosecond X-ray Raman Scattering.

Authors:  Daniel Healion; Yu Zhang; Jason D Biggs; Niranjan Govind; Shaul Mukamel
Journal:  J Phys Chem Lett       Date:  2012-08-08       Impact factor: 6.475

  2 in total

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