Literature DB >> 17190520

Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C60.

Qi-Dan Ling1, Siew-Lay Lim, Yan Song, Chun-Xiang Zhu, Daniel Siu-Hhung Chan, En-Tang Kang, Koon-Gee Neoh.   

Abstract

A functional polymer (PVK-C60), containing carbazole moieties (electron donors) and fullerene moieties (electron-acceptors) in a molar ratio of about 100:1, was synthesized via covalent tethering of C60 to poly(N-vinylcarbazole) (PVK). The molecular structure and composition of PVK-C60 were characterized by FTIR, Raman, and UV-vis absorption spectroscopy, gel permeation chromatography (GPC), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CyV). The C60-modified PVK exhibited an enhanced glass-transition temperature (Tg = 226 degrees C) and good solubility in organic solvents such as toluene, tetrahydrofuran, chloroform, and N,N-dimethylformamide (DMF). It could be cast into transparent films from solutions. For a thin film of PVK-C60 sandwiched between an indium tin oxide (ITO) electrode and an Al electrode (ITO/PVK-C60/Al), the device behaved as nonvolatile flash (rewritable) memory with accessible electronic states that could be written, read, and erased. The polymer memory exhibited an ON/OFF current ratio of more than 105 and write/erase voltages around -2.8 V/+3.0 V. Both the ON and OFF states were stable under a constant voltage stress of -1 V for 12 h and survived up to 108 read cycles at -1 V under ambient conditions.

Entities:  

Year:  2007        PMID: 17190520     DOI: 10.1021/la061504z

Source DB:  PubMed          Journal:  Langmuir        ISSN: 0743-7463            Impact factor:   3.882


  6 in total

1.  Ferroelectric memory based on nanostructures.

Authors:  Xingqiang Liu; Yueli Liu; Wen Chen; Jinchai Li; Lei Liao
Journal:  Nanoscale Res Lett       Date:  2012-06-01       Impact factor: 4.703

2.  Application of nanomaterials in two-terminal resistive-switching memory devices.

Authors:  Jianyong Ouyang
Journal:  Nano Rev       Date:  2010-05-26

3.  Overview of emerging nonvolatile memory technologies.

Authors:  Jagan Singh Meena; Simon Min Sze; Umesh Chand; Tseung-Yuen Tseng
Journal:  Nanoscale Res Lett       Date:  2014-09-25       Impact factor: 4.703

Review 4.  Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application.

Authors:  Zongjie Shen; Chun Zhao; Yanfei Qi; Wangying Xu; Yina Liu; Ivona Z Mitrovic; Li Yang; Cezhou Zhao
Journal:  Nanomaterials (Basel)       Date:  2020-07-23       Impact factor: 5.076

5.  A Universal Strategy for Stretchable Polymer Nonvolatile Memory via Tailoring Nanostructured Surfaces.

Authors:  Chaoyi Ban; Xiangjing Wang; Zhe Zhou; Huiwu Mao; Shuai Cheng; Zepu Zhang; Zhengdong Liu; Hai Li; Juqing Liu; Wei Huang
Journal:  Sci Rep       Date:  2019-07-17       Impact factor: 4.379

6.  Effects of Pyrazine Derivatives and Substituted Positions on the Photoelectric Properties and Electromemory Performance of D⁻A⁻D Series Compounds.

Authors:  Xuejing Song; Lingqian Kong; Hongmei Du; Xiangyu Li; Hanlin Feng; Jinsheng Zhao; Yu Xie
Journal:  Materials (Basel)       Date:  2018-10-22       Impact factor: 3.623

  6 in total

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