Literature DB >> 17177394

Growth of ultrathin films of amorphous ruthenium-phosphorus alloys using a single source CVD precursor.

Jinhong Shin1, Abdul Waheed, Kyriacos Agapiou, Wyatt A Winkenwerder, Hyun-Wu Kim, Richard A Jones, Gyeong S Hwang, John G Ekerdt.   

Abstract

Thin films ( approximately 30 nm) of amorphous RuP alloys (P approximately 15-20%) can be grown by CVD from the single source precursor cis-H2Ru(PMe3)4 at 250-300 degrees C and 200 mTorr pressure on native SiO2.

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Year:  2006        PMID: 17177394     DOI: 10.1021/ja0673938

Source DB:  PubMed          Journal:  J Am Chem Soc        ISSN: 0002-7863            Impact factor:   15.419


  1 in total

Review 1.  Recent Advances in Barrier Layer of Cu Interconnects.

Authors:  Zhi Li; Ye Tian; Chao Teng; Hai Cao
Journal:  Materials (Basel)       Date:  2020-11-09       Impact factor: 3.623

  1 in total

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